XSJ-10-D3-70-04/2.5Gbps Φ70μm Digital PIN PD Chip/PHOGRAIN

Product catalog summary

Introduction
This document details a 2.5Gbps photodiode chip with an InGaAs/InP PIN planar structure, featuring a top-illuminated digital photodiode chip with a 70μm active area. It is characterized by low dark current, low capacitance, high responsivity, and excellent reliability, suitable for optical receivers and EPON ONU applications.

Features

70μm active area.
High responsivity.
Low dark current.
Excellent reliability, meeting Telcordia-GR-468-CORE standards.
100% testing and inspection.

Applications

2.5Gbps GPON/EPON ONU receiver.
EPON ONU.

Electro-Optical Characteristics
Measured at a temperature of 22±3℃, the key parameters include:

Response Spectrum: 1200-1600 nm.
Dark Current: 0.1-0.5 nA at VR=5V.
Reverse Breakdown Voltage: 30 V at IR=10μA.
Forward Voltage: 0.8 V at IF=1mA.
Responsivity: 0.95-1.1 A/W at specified conditions.
Bandwidth: 2.5 GHz at λ=1550nm.
Capacitance: 0.45-0.6 pF at f=1MHz, VR=5.0V.

Absolute Maximum Ratings

Reverse Voltage: Max 20 V.
Forward Current: Max 10 mA.
Reverse Current: Max 5 mA.
Optical Power Input: Max 10 mW.
Storage Temperature: -45 to 125 ℃.
Operating Temperature: -40 to 85 ℃.

Dimensions

Active Area: 70 μm.
Bond Pad: 70 μm.
Die Length: 220-240 μm.
Die Width: 220-240 μm.
Die Height: 110-130 μm.

Cautions

Implement ESD protective measures to prevent electrostatic damage.
Handle InP-based chips carefully to avoid damage.
Use vacuum adsorption instead of tweezers for handling.
Set bonding force and temperature carefully to avoid chip damage.

Catalog excerpts

XSJ-10-D3-70-04/2.5Gbps Φ70μm Digital PIN PD Chip/PHOGRAIN-1

(P/N: XSJ-10-D3-70-04) Introduction This 2.5Gbps photodiode chip is InGaAs/InP PIN planar structure and top-illuminated digital photodiode chip, active area size is Φ70μm. That features is low dark current, low capacitance, high responsivity and excellent reliability. Application in 2.5Gbps and below optical receiver and EPON ONU. High responsivity. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 2.5Gbps GPON/EPON ONU receiver. EPON ONU. Email: [email protected]

Open the catalog to page 1

XSJ-10-D3-70-04/2.5Gbps Φ70μm Digital PIN PD Chip/PHOGRAIN-2

Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000516 Rev C

Open the catalog to page 2

XSJ-10-D3-70-04/2.5Gbps Φ70μm Digital PIN PD Chip/PHOGRAIN-3

1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: [email protected] Web: www.xinsijie.com.cn D00000516 Rev C

Open the catalog to page 3