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PHG1-D8-90LA-KB

Product catalog summary

Introduction
This document details the specifications and features of the 112GBaud/200Gbps bottom-illuminated PIN photodiode chip, model PHG1-D8-90LA-KB. It is designed for high data rate applications with a Φ90μm lens integrated on the chip's bottom, suitable for wavelengths from 980nm to 1650nm, and supports data rates up to 200Gbps.

Features

Integrated Φ90μm lens on the bottom.
Ground-Signal-Ground (GSG) bond pad structure.
Low dark current and capacitance.
High responsivity and bandwidth (50GHz).
Excellent reliability, compliant with Telcordia-GR-468-CORE and RoHS2.0 standards.
100% testing and inspection.

Applications

800G Optical Modules.
1.6T Optical Modules.

Electro-Optical Characteristics
Operating at a temperature of 22±3℃, the chip features a response spectrum of 980-1650nm, dark current of 0.15-3.0nA at VR=5.0V, and a bandwidth of 50GHz. It has a reverse breakdown voltage of 20V and a responsivity of 0.7-0.75 A/W at λ=1310nm.

Absolute Maximum Ratings

Reverse Voltage: 20V
Forward Current: 10mA
Reverse Current: 5mA
Optical Power Input: 10mW
Storage Temperature: -45 to 125℃
Operating Temperature: -40 to 85℃
ESD Susceptibility: 100V

Model Description
The document describes three models with different lens offsets from the active area: PHG1-D8-90LA-KB (0μm), PHG1-D8-90LB-KB (+6μm), and PHG1-D8-90LC-KB (-6μm).

Dimensions
The active area diameter is Φ11μm, lens diameter is Φ90μm, and the die dimensions are 390μm in length, 380μm in width, and 150μm in height.

Cautions

Implement ESD protective measures to prevent damage.
Handle InP-based chips carefully to avoid damage.
Use vacuum adsorption instead of tweezers for handling.
Set bonding force and temperature carefully to avoid chip damage.

Catalog excerpts

(PIN: PHG1-D8-90LA-KB)Introduction This 112GBaud 200Gbps photodiode chip, which is bottom-illuminated and mesa structure high data rate PIN photodiode chip, with 090pm lens integrated on chip’s bottom. Its features is high bandwidth, high responsivity, low capacitance, low dark current and excellent reliability, application 980nm to 1650nm with single mode fiber wavelength , with date rate up to 200Gbps long wavelength optical receiver. 1. 090pm lens integrated on bottom. 2. Ground-Signal-Ground (GSG) bond pad structure. 7. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. Tel: +86 755-23712706 Email: [email protected] Web: www.phograin.com D00003130 Rev 001 Classified:^Top-secret^Secret^Confidential^Internal Use Only^Public Template No. : D00002223

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Electro-Optical characteristics (Top=22±30C, unless otherwise specified) Tel: +86 755-23712706 Email: [email protected] Web: www.phograin.com D00003130 Rev 001 Classified:^Top-secret^Secret^Confidential^Internal Use Only^Public Template No. : D00002223

Open the catalog to page 2

PHG1-D8-90LC-KB Tel: +86 755-23712706 Email: [email protected] Web: www.phograin.com D00003130 Rev 001 Classified:^Top-secret^Secret^Confidential^Internal Use Only^Public Template No. : D00002223

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Cautions 1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: [email protected] Web: www.phograin.com D00003130 Rev 001 Classified:^Top-secret^Secret^Confidential^Internal Use Only^Public Template No. : D00002223

Open the catalog to page 4

PHG1-D8-90LA-KB

PHG1-D8-90LA-KB

Catalog excerpts

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