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PHG1-D7A-20H-K4-750
PHG1-D7A-20H-K4-750
This document details the specifications and features of the 4X56GBaud Array 400Gbps photodiode chip, a top-illuminated, mesa structure digital PIN photodiode chip with a Φ20μm active area. It is designed for high data rate applications, supporting wavelengths from 910nm to 1650nm, and is suitable for use in long wavelength optical receivers with data rates up to 50Gbps.
- Φ20μm active area.
- Ground-Signal-Ground (GSG) bond pad structure, 4X56GBaud array.
- Low dark current, low capacitance, high responsivity.
- Data rate: ≥ 56GBaud/channel.
- Die pitch: 750μm.
- Excellent reliability, compliant with Telcordia-GR-468-CORE standards.
- 100% testing and inspection.
- RoHS2.0 (2011/65/EU) compliant.
- 200G Optical Modules.
- 400G Optical Modules.
Operating conditions are specified at a temperature of 22±3℃. Key parameters include:
- Response Spectrum: 910 to 1650 nm.
- Dark Current: 0.15 to 3.0 nA at VR=5.0V.
- Reverse Breakdown Voltage: 25 V at IR=10μA.
- Responsivity: 0.75 to 0.83 A/W at λ=1310nm.
- Bandwidth: 24 to 26 GHz at λ=1310nm.
- Capacitance: 85 to 120 fF at f=1MHz.
- Reverse Voltage: Max 20 V.
- Forward Current: Max 10 mA.
- Reverse Current: Max 5 mA.
- Optical Power Input: Max 10 mW.
- Storage Temperature: -45 to 125 ℃.
- Operating Temperature: -40 to 90 ℃.
- ESD Susceptibility: Max 100 V.
- Active Area: Φ20 ±2 μm.
- Signal Bond Pad: Φ80 ±2 μm.
- Ground Bond Pad: 80X80 ±2 μm.
- Die Length: 2730 ±10 μm.
- Die Width: 350 ±10 μm.
- Die Height: 150 ±10 μm.
- Die Pitch: 750 μm.
- Implement ESD protective measures to prevent electrostatic damage.
- Handle InP-based chips with care to avoid damage.
- Use vacuum adsorption instead of tweezers for handling.
- Carefully set bonding force and temperature to avoid chip damage.
Catalog excerpts
(PIN: PHG1-D7A-20H-K4-750)Introduction This 4X56GBaud Array 400Gbps photodiode chip, which is top-illuminated and mesa structure high data rate digital PIN photodiode chip, active area size is 020pm. Its features is high, low capacitance, low dark current and excellent reliability, application 910nm to 1650nm with single mode fiber wavelength , with date rate up to 50Gbps long wavelength optical receiver. 2. Ground-Signal-Ground (GSG) bond pad structure, 4X56GBaud array. 3. Low dark current, low capacitance, high responsibility. 6. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. Tel: +86 755-23712706 Email: [email protected] Web: www.phograin.com D00003129 Rev A0 Classified:^Top-secret^Secret^Confidential^Internal Use Only^Public Template No. : D00002223
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4X56GBaud Q20pm 750pm Die Pitch 1X4 Array PIN PD Chip Tel: +86 755-23712706 Email: [email protected] Web: www.phograin.com D00003129 Rev A0 Classified:^Top-secret^Secret^Confidential^Internal Use Only^Public Template No. : D00002223
Open the catalog to page 2
• 4X56GBaud (P20|jm 750pm Die Pitch 1X4 Array PIN PD Chip Cautions 1. Take necessary ESD protective measures, avoid to prevent electrostatic damage the chip. 2. InP-based chip are easily fragile and damaged, should be very carefully used when handling. 3. Do not handle with tweezers, recommended by vacuum adsorption. 4. Bonding force, temperature should be carefully setting, in order to avoid damage to the chip. Tel: +86 755-23712706 Email: [email protected] Web: www.phograin.com D00003129 Rev A0 Classified:^Top-secret^Secret^Confidential^Internal Use Only^Public Template No. : D00002223
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