Accuracy of 3 յ m/3 o High-speed mounting at 1.8 s/chipՕ Adaptable to a wide variety of production styles The bonding head unit and die supply system are modular so that futurechangeovers to the latest process requirements will be easierՕ The clean running design and front-supply system for 300 mm wafers facilitate production changeover > MODEL NUMBERAPPLICABLE SUBSTRATE SIZE APPLICABLE IC SIZE DRY CYCLE TIME BONDING ACCURACY IC SUPPLY METHOD NM-SB50A50 mm square to 330 x 250 mm1 mm square to 20 mm square1.8s/IC 3 m/3Up to 300 mm (12 inch) diameter2 inch square, 4 inch square5 N~ 490 Nup to 500հ C 1,635 mm1,980 mm1,800 mm Wafer supply Tray supply BONDING PRESSUREBONDING HEAD TEMPERATUREDIMENSIONS W D H FCB3 size="-4">