Plasma Processing Equipment catalog Dry Etcher ● The APX 300 contributes to high-level productivity in the etching process thanks to high speed LED film processing ● The LED substrate surface can be etched to diverse shapes such as trapezoidal and conical form ● Housing the equipment in one box contributes to increased area productivity Plasma source Process gas 4 Lines (standard) ( Maximum 6 Lines: Chlorinated Gas, Fluoride Gas, Ar, O2, He, etc.) φ100 mm wafer with orientation flat (standard) W 1 350 × D 2 230 × H 2 000 (Does not include touch panels, operation section and signal tower) 2 100 kg (differs depending on machine configuration) Power source Pneumatic source *1 : For other size wafers, please contact us *2 : 2 line 3-phase power source, and this show

Advanced ICP and Multi‐ESC realize high accuracy & high productivity GaN and Sapphire PSS application LED Chip structure Original Advanced ICP ［MSC-ICP］ High Efficiency ICP coil Matching unit Good Uniformity GaN Isolation Typical depth= 5∼10μm Quartz plate wafer Etching chamber Lower electrode GaN MESA Typical depth= 1.0∼2.0μm Multi number of wafers can be etched at once with Direct cooling in one chamber Active layer p-Gan n-Gan Sapphire processing APX300 can be used for Plasma Dicing Blade Dicing Plasma Dicing High productivity for Hard fabrication material Chipping FREE Particle FREE (Example)...