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AQV DIP Form B Reinforced Isolation Catalog - 4 Pages

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AQV DIP Form B Reinforced Isolation Catalog

Catalog excerpts

(Standard type) Normally closed DIP6-pin economic type with reinforced insulation (Reinforced type) 5. High sensitivity and low onresistance Can control max. 0.55 A load current with 5 mA input current. Low on-resistance of typ. 1Ω (AQV412EH). 6. Low-level off-state leakage current of max. 1 µA (AQV414E) 7. Reinforced insulation 5,000 V type also available More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 1. High cost-performance type of PhotoMOS 1 Form B output 2. 60V type couples high capacity (0.55A) with low on-resistance (typ. 1Ω). 3. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Intermediate Source electrode Gate electrode insulating membrane Gate oxidation membrane TYPICAL APPLICATIONS • Power supply • Measuring equipment • Security equipment • Telephone equipment • Sensing equipment Drain electrode RoHS compliant 4. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. Output rating* I/O isolation voltage Package Load voltage Load current Through hole terminal Packing quantity Surface-mount terminal Tape and reel packing style Picked from the Picked from the 1/2/3-pin side 4/5/6-pin side Tube packing style AQV414E DIP6-pin 1 tube contains: 50 pcs. 1 batch contains: 500 pcs. *Indicate the peak AC and DC values. Note: The surface mount terminal shape indicator “A” and the packing style indicator “X” or “Z” are not marked on the device. RATING 1. Absolute maximum ratings (Ambient temperature: 25°C 77°F) Item LED forward current LED reverse voltage Peak forwrd current Power dissipation Load voltage (peak AC) Continuous load current Peak load current Power dissipation Total power dissipation I/O isolation voltage Ipeak Pout PT Viso Temperature Operating limits Storage Topr Tstg Panasonic Corporation Automation Controls Business Unit A connection: Peak AC, DC B,C connection: DC A connection: 100 ms (1 shot), VL = DC

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GU-E 1 Form B (AQV414E, AQV41❍EH) 2. Electrical characteristics (Ambient temperature: 25°C 77°F) Item Symbol Typical Maximum Minimum Typical Typical Maximum IFoff IFon Typical Maximum Off state leakage current Operate (OFF) time* Transfer characteristics Reverse (ON) time* I/O capacitance Initial I/O isolation resistance Maximum Typical Maximum Typical Maximum Typical Maximum Minimum IF = 0 mA IL = Max. Within 1 s on time IF = 0 mA IL = Max. Within 1 s on time IF = 0 mA IL = Max. Within 1 s on time IF = 5 mA VL = Max. IF = 0 mA ➝ 5 mA IL = Max. IF = 5 mA ➝ 0 mA IL = Max. f = 1 MHz VB = 0 V...

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GU-E 1 Form B (AQV414E, AQV41❍EH) REFERENCE DATA 1-(1). Load current vs. ambient temperature characteristics 1-(2). Load current vs. ambient temperature characteristics 2. On resistance vs. ambient temperature characteristics Allowable ambient temperature: –40°C to +85°C –40°F to +185°F Type of connection: A Allowable ambient temperature: –40°C to +85°C –40°F to +185°F Type of connection: A Measured portion: between terminals 4 and 6; LED current: 0 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) 50 3. Operate (OFF) time vs. ambient temperature characteristics 4. Reverse...

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GU-E 1 Form B (AQV414E, AQV41❍EH) 8-(2). Current vs. voltage characteristics of output at MOS portion 9. Off state leakage current vs. load voltage characteristics 10. Operate (OFF) time vs. LED forward current characteristics Measured portion: between terminals 4 and 6; Ambient temperature: 25°C 77°F Sample: All types; Measured portion: between terminals 4 and 6; LED current: 5 mA; Ambient temperature: 25°C 77°F Measured portion: between terminals 4 and 6; Load voltage: Max. (DC); Continuous load current: Max. (DC); Ambient temperature: 25°C 77°F Off state leakage current, A 11. Reverse...

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