FET SS120ZP120A

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FET SS120ZP120A

Product catalog summary

Features

SiC Schottky Barrier Diode (SBD) is mounted.
High voltage capability of 1200V.
High-speed performance with a reverse recovery time (trr) of less than or equal to 50 nanoseconds.

Applications

High-frequency switched mode power supplies.
Block diode for reverse current as a flywheel.
Power factor and harmonic correction in snubber circuits.

Specifications (SS120ZP120A)

Repetitive Peak Reverse Voltage: 1200V
Average Rectified Forward Current: 60A
Peak Surge Forward Current: 150A
Operating Junction Temperature: -40°C to 150°C
Forward Voltage Drop (Max): 1.65V
Reverse Leakage Current (Max): 1.2mA
Reverse Recovery Time (Max): 50ns

Outline

The module is housed in a SOT-227 package with specific dimensions provided for mounting and integration purposes.

Characteristics

Forward Characteristics: The forward current (I_F) varies with forward voltage (V_F) across different junction temperatures (T_j).
Reverse Characteristics: The reverse current (I_R) is plotted against reverse voltage (V_R) for various junction temperatures.

Additional Information

The document includes a cautionary note emphasizing the importance of ensuring safety and reliability in applications requiring high reliability, such as aerospace and medical equipment. It advises consulting with the sales office for any questions and highlights the need for a fail-safe design in critical applications.

Catalog excerpts

SiC SBD Module ● Features １．SiC SBD is mounted. ２．High voltage (1200V). ３．High speed (trr≦50nsec). ● Applications １．High frequency switched mode power supplies. ２．Block diode (reverse current) as flywheel. ３．Power factor and harmonic correction (snubber circuit). ● Specification （SS120ZP120A） Repetitiv e Peak Rev erse Voltage Av erage Rectif ied Forward Current Peak Surge Forward Current Operating Junction Temperature Storage Temperature Forward Voltage Drop (Max) Rev erse Leakage Current (Max) Rev erse Recov ery Time (Max) Tj=25℃, 50Hz, Single-phase, Half sin wav e, Non-repetitiv e

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● Characteristics Forward Characteristics 1arm(TYP) Reverse Characteristics ◎Products that are described in this article are semiconductor products for general industry.To take measures to be able to ensure the safety and reliability according to the importance of the system to be adopted by the customer in use.In addition, please check with our sales office for any questions. ◎Extremely high reliability, safety is required use "for electronic power control, aerospace equipment, for transportation equipment, medical equipment, such as for fuel control equipment" in, and your use of the product...

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FET SS120ZP120A

FET SS120ZP120A

Catalog excerpts

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