FET OFS50M120F

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FET OFS50M120F

Product catalog summary

Features

Incorporates SiC MOSFET and SiC SBD.
Operates at high voltage (1200V).
Low On-Resistance (RDS(on) ≤ 60mΩ at ID=20A).

Applications

High frequency switched mode power supplies.
Block diode for reverse current as flywheel.
Power factor and harmonic correction (snubber circuit).

Specifications

Type: OFS50M120F
Drain-Source Voltage (VDS): 1200V
Drain Current (ID): 50A
Gate-Source Voltage (VGS): -6 to +22V
Junction Temperature (Tj): -40°C to 150°C
Storage Temperature (Tstg): -40°C to 150°C
Gate-Source Threshold Voltage (VGS(th)): 1.6 to 4.0V
Drain Cut-off Current (IDSS): 820μA
On Resistance (RDS(on)): 60mΩ
Thermal Resistance (Rth(j-c)): 0.45°C/W

Outline

The module is housed in a SOT-227 package with precise dimensions provided for installation.

Characteristics

Safe Operation Area: Defined by RDS(on) with various pulse durations.
Output Characteristics: Shows the relationship between VDS and ID at different VGS values.
VGS(th) Temperature Characteristics: Illustrates how the gate-source threshold voltage varies with junction temperature.
RDS(on) Temperature Characteristics: Displays the change in on-resistance with junction temperature.
Vgs - Qg Characteristics: Depicts the gate charge capacity against gate-source voltage.
C - VDS Characteristics: Shows capacitance variations with drain-source voltage.

Additional Information

Origin Co., Ltd. provides this semiconductor product for general industry use. For applications requiring high reliability and safety, such as aerospace or medical equipment, a fail-safe design is recommended. Contact the sales office for further inquiries.

Catalog excerpts

Full SiC MOSFET Module ● Features １．SiC MOSFET and SiC SBD are mounted. ２．High voltage (1200V). ３．Low On-Resistance (RDS(on)≦60mΩ at ID=20A). ● Applications １．High frequency switched mode power supplies. ２．Block diode (reverse current) as flywheel. ３．Power factor and harmonic correction (snubber circuit). ● Specification （OFS50M120F） GateSource Threshold Voltage DrainSource Voltage Drain Voltage On Thermal Resistance Resistance (MAX) (

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● Characteristics Safe Operation Area Output Characteristics VGS(th) Temperature Characteristics Tj=25℃(TYP) VGS(th), Gate - Source Threshold Voltage [V] Operation in this area is limited by R DS(on) 101 102 103 VDS, Drain - Source Voltage [V] VDS, Drain - Source Voltage [V] RDS(on) Temperature Characteristics Vgs, Gate - Source Voltage [V] 50 100 150 Qg, Gate Charge Capacity [nC] VDS, Drain - Source Voltage [V] ◎Products that are described in this article are semiconductor products for general industry.To take measures to be able to ensure the safety and reliability according to the importance...

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FET OFS50M120F

FET OFS50M120F

Catalog excerpts

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