Full SiC MOSFET Module ● Features １．SiC MOSFET and SiC SBD are mounted. ２．High voltage (1200V). ３．Low On-Resistance (RDS(on)≦60mΩ at ID=20A). ● Applications １．High frequency switched mode power supplies. ２．Block diode (reverse current) as flywheel. ３．Power factor and harmonic correction (snubber circuit). ● Specification （OFS50M120F） GateSource Threshold Voltage DrainSource Voltage Drain Voltage On Thermal Resistance Resistance (MAX) (

● Characteristics Safe Operation Area Output Characteristics VGS(th) Temperature Characteristics Tj=25℃(TYP) VGS(th), Gate - Source Threshold Voltage [V] Operation in this area is limited by R DS(on) 101 102 103 VDS, Drain - Source Voltage [V] VDS, Drain - Source Voltage [V] RDS(on) Temperature Characteristics Vgs, Gate - Source Voltage [V] 50 100 150 Qg, Gate Charge Capacity [nC] VDS, Drain - Source Voltage [V] ◎Products that are described in this article are semiconductor products for general industry.To take measures to be able to ensure the safety and reliability according to the importance...