OIT12C-OIT12C-S

OIT12C-OIT12C-S

OIT12C-OIT12C-S

Product catalog summary
General Description
The OIT12C is a monolithic array of silicon phototransistors with a common collector and individual emitter access. It features a 0.45 mm optical pitch and a 1.10 mm electrical pitch in an LCC package. Each phototransistor has an active area of 0.25 x 0.50 mm². The product offers high uniformity, signal stability, and optical responsivity due to its monolithic construction and antireflective coating. The encapsulant is a clear epoxy with high transmittance, while the S version uses a silicone-based encapsulant for extended temperature range.

Applications
The OIT12C is suitable for optical encoders, incremental encoders, optical receivers, controls/drives, and light sensors.

Features
  • High uniformity of silicon cells
  • Smaller optical pitch with a wider active area
  • High transparency resin
  • High gain
  • Compact dimensions
  • Reference points for precise mounting

Pin Functions
The device includes multiple phototransistor emitters (DE, BE, AE, CE, EE, GE, IE, HE, FE) and a common collector (CC).

Ordering Information
The OIT12C is available in a 9-channel phototransistor array with options for hard or soft glob top resin.

Absolute Maximum Ratings
  • Operating Temperature: -40 to 85°C (standard), -40 to 100°C (S version)
  • Storage Temperature: -40 to 85°C (standard), -40 to 100°C (S version)
  • Lead Temperature (solder): 230°C for 3 seconds
  • Breakdown Voltage: 50V
  • Power Dissipation: 150 mW

Electrical Characteristics
  • Dark Current: 5-100 nA
  • Responsivity: 0.5 A/W at 880 nm
  • Spectral Bandwidth: 500-950 nm
  • Gain: 600-1500
  • Saturation Voltage: 80-200 mV

AC Switching Characteristics
  • Rise and Fall Time: 10 μs

Mechanical Characteristics
  • Active Area: 0.125 mm²
  • Length: 0.25 mm
  • Width: 0.50 mm

Package Characteristics
  • Pad Surface Finishing: Gold
  • Pad Shelf Life: 6 months
  • Moisture Sensitivity Level: 5 (standard), 3 (S version)

Typical Performance Curves
Figures illustrate output voltage versus temperature and normalized spectral responsivity.
See more

Catalog excerpts

OIT12C-OIT12C-S-1

OIT12C-OIT12C-S9-ch phototransistor array 0.45mm optical pitch on plastic SMD package General Description OIT12C consists in a silicon phototransistor’s monolithic array. The phototransistors have a common collector on the back substrate, which is tied to a single pad and every emitter is accessible to specific pad. The optical pitch of the array is 0.45 mm, the LCC package electrical pitch is 1.10 mm. The active area of each element is 0.25 x 0.50 mm2. The advantages of this product are the high uniformity of the silicon sensors, due to the monolithic construction and to the extremely controlled microelectronic process, the high stability of the signal and the high optical responsivity, due to the antireflective coating deposited on the phototransistor’s areas. The encapsulant is a clear epoxy material, having high hardness and high optical performances (transmittance close to 100% in the range 300-900nm). The S version has another encapsulant type, less hard, silicone based, in order to reach an extended temperature range. The size is reduced to the minimum, in order to optimize the cost and the encoder space. Two reference marks are available for the precise collimator positioning. Applications Optical encoders Incremental encoders Optical Receivers Controls/drives Light sensors Features ■ High uniformity of the silicon cells ■ Smaller optical pitch, wider active area ■ High transparency resin ■ High gain ■ Very small dimensions ■ Reference points for precise mounting Pin Functions Ordering Information OIT12C 9-ch. phototransistor array 0.45mm optical pitch , hard glob top resin OIT12C-S 9-ch. phototransistor array 0.45mm optical pitch , soft glob top resin range

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OIT12C-OIT12C-S-2

f According to Jedec standard J-STD-020D.1 Note: if a baking is required, please note that the standard version must be baked at temperature below max rating

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OIT12C-OIT12C-S-3

Units=mm Mechanical tolerance=+/-0.2mm Die positioning tolerance=+/-0.030mm TYPICAL PERFORMANCE CURVES Figure 1 - Output voltage Vs Temperature

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