OIT11C

OIT11C

OIT11C

Product catalog summary
General Description
The OIT11C is a monolithic array of silicon phototransistors with a common collector and individual emitter pads. The array pitch is 0.6 mm, and the electrical pitch is 1.10 mm. Each element has an active area of 0.2 x 0.45 mm. The encapsulant is a high-quality transparent resin with 100% transmission in the 300-900 nm range. The product offers high uniformity and optical responsivity due to its monolithic construction and antireflective coating. It is designed for industrial applications with high temperature stability and uniformity.
Applications
The OIT11C is suitable for use in optical encoders, incremental encoders, optical receivers, and control/drives.
Features
  • High uniformity and gain
  • High transparency resin
  • Designed for industrial specifications
  • Reference holes for precise mounting
  • Custom design available
  • 0.6 mm optical pitch (0.68 mm on request)
  • RoHS compliant
Pin Functions
The device has several pins, including emitters for phototransistors B, A, C, E, F, and D, a common collector, and not connected pins.
Ordering Information
The OIT11C is available as a 6-element monolithic SMD phototransistor and as an incremental encoder chip with a 0.6 mm pitch.
Absolute Maximum Ratings
  • Operating Temperature: -40 to 85 °C
  • Storage Temperature: -40 to 100 °C
  • Lead Temperature (solder): 230 °C for 3 seconds
  • Breakdown Voltage: 50 V
  • Power Dissipation: 150 mW
Exceeding these ratings may cause permanent damage.
Electrical Characteristics
  • Dark Current: 5-100 nA
  • Responsivity: 0.5 A/W at 880 nm
  • Peak Responsivity: 750 nm
  • Spectral Bandwidth: 500-950 nm
  • Emitter-Collector Current: 0.1-100 µA
  • Collector-Emitter Current: 0.1-100 µA
  • Gain: 600
  • Saturation Voltage: 150-200 mV
  • On-state Collector Current: 1 mA
AC Switching Characteristics
  • Rise Time: 10 µs
  • Fall Time: 11 µs
Mechanical Characteristics
  • Active Area: 0.09 mm²
  • Length: 0.2 mm
  • Width: 0.45 mm
Mechanical Dimensions
Units are in mm with a mechanical tolerance of +/-0.2 mm and die positioning tolerance of +/-0.030 mm.
Typical Performance Curves
The document includes performance curves for output voltage versus temperature and normalized spectral responsivity.
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Catalog excerpts

OIT11C-1

OIT11C incremental encoder chip 0.6 mm General Description OIT11C consists in a silicon phototransistor’s monolithic array. The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon arrays is 0.6 mm, while the component electrical pitch is 1.10 mm. The active area of each element is 0.2 x 0.45 mm. The encapsulant is an high quality microelectronic transparent resin, its transmission value is 100% in the range 300-900nm. The advantages of this product are the high uniformity of the silicon sensors, due to the monolithic construction and the high optical responsivity, due to the antireflective coating deposited on the phototransistor’s areas. The packaging method is oriented to industrial harsh applications, which means high temperature range, high stability in time and very high uniformity of the silicon cells. Applications Optical encoders Incremental encoders Optical Receivers Controls/drives Features ■ High uniformity ■ High gain ■ High transparency resin ■ Designed to meet industrial specifications ■ Reference holes for precise mounting ■ Custom design available ■ 0.6 mm optical pitch (0.68 mm on request) ■ RoHS compliant Function Phototransistor B Emitter Not connected Common collector Phototransistor A Emitter Not connected Phototransistor C Emitter Phototransistor E Emitter Not connected Phototransistor F Emitter Phototransistor D Emitter OIT11C 6 elements monolithic SMD phototransistor

 Open the catalog to page 1
OIT11C-2

Units=mm Mechanical tolerance=+/-0.2mm Die positioning tolerance=+/-0.030mm

 Open the catalog to page 2
OIT11C-3

OIT11C TYPICAL PERFORMANCE CURVES Figure 1 – Output voltage Vs Temperature Figure 2 – Normalized spectral responsitivity

 Open the catalog to page 3

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