OIER3
4Pages

Catalog excerpts

General Description The OIER3 reflective sensor consists in an infrared emitting diode and a double NPN silicon phototransistor. The components together are mounted side by side in a plastic black SMD housing. The black package avoids light reflections, noise and behaves as a barrier between led and photoreceivers. The phototransistors respond to radiation emitted from the diode only if a reflective object surface is within the field of view of the detector. Applications Scanning Automated transaction systems Metering systems Motion control systems Non invasive medical equipment Low distance metering _ Features ■ Unfocused for sensing diffused surface ■ SMT package ■ High uniformity ■ Very stable measurements ■ High gain phototransistor ■ No contact surface sensing ■ Low profile ■ Low cost ■ Milling on the backside for side PCB mounting Function Phototransistor Collector Phototransistor Emitter LED Anode LED Cathode Ordering Information OIER3 Reflective Sensor with Infrared LED

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OIER3 TYPICAL PERFORMANCE CURVES Figure 1 – Normalized collector current VS Distance to reflective surface [mm] § Figure 3 – Normalized collector current [Ic/Ic5mA]VS Forward led current [mA]§ 7 Norm aliz ed collector current [5m A] Norm aliz ed collector current Figure 2 – Normalized collector current typical drift VS temperature [°C] 1,3 Figure 4 – Forward led current [mA] VS Forward led voltage [V] § 120.00 Forward voltage VS Forward current T=25° C Normalized collector current § Ta=25° unless otherwise noted C http://www.

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OIER3 TYPICAL APPLICATION INTERFACE Figure 5 – Digital interface IIN input current required for AD conversion Vo output analog voltage (the voltage gain is given by R2 and IF) Figure 6 –Linear signal conversion to digital Vo = Aol * (VR 2 − Vr ) Vr voltage threshold Vo voltage digital output Figure 7 – Threshold comparator

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