OID7 6 p/n photodiode array chip General Description Optical device consisting of a 6 chip silicon P/N photodiode array with high uniformity for the output signals. The device gives its best performances reverse biased, as it is based on PiN diodes. The active area of each silicon die is 2.5 x 1.1 mm2. The high optical responsivity is due to optimized antireflective coating deposited on the photodiode active areas. The dark current is excellent for high temperature applications. The package material is an high quality plastic material, with high TG. OID7 is fully compatible with OID2 and has a new design that increases the component reliability. Applications Incremental Encoders General Purpose Features ■ High Responsivity (> 0.65 A/W @ X = Xp) ■ High quantum efficiency (> 90% @ Vr=5V) ■ Extended temperature range -40°C +125°C ■ Wide active area ■ Fast response time ■ Low Dark Current ■ Fully compatible with OPR2100 and OL2100 Pin Functions Function Photodiode A Cathode Photodiode B Cathode Photodiode B Anode Photodiode C Anode Photodiode C Cathode Photodiode D Cathode Background Contact Photodiode D Anode Photodiode E Cathode Photodiode E Anode Photodiode F Anode Photodiode F Cathode Photodiode A Anode OID7 6 Chip Silicon P/N Photodiode Array with Active

Units=mm Mechanical tolerance=+/-0.2mm Die positioning tolerance=+/-0.030mm

OID7 PACKAGE CHARACTERISTICS Symbol Moisture Sensitive Level TYPICAL PERFORMANCE CURVES Figure 3 Dark current Vs Temperature Conditions: Vrev=5V, E=0 Figure 1 Spectral Responsivity Conditions: collimated light (light spot inside the active area of the photodiode), Ta=25°C Figure 2 Photocurrent Vs Reverse Voltage Conditions: collimated red light 2,5x1,25mm2, Iph=500uA, Vrev=5V, Ta=25°C Figure 4 Junction Capacitance Vs Temperature Conditions: Vrev=0V, f=10kHz