1. Catalogs
  2. Onto Innovation Inc.
  3. Improving the Accuracy of Bump Height and Coplanarity Measurement

Improving the Accuracy of Bump Height and Coplanarity Measurement

Improving the Accuracy of Bump Height and Coplanarity Measurement

Improving the Accuracy of Bump Height and Coplanarity Measurement

Product catalog summary
Introduction
The document discusses advancements in bump height and coplanarity measurement techniques in semiconductor packaging, focusing on the challenges and solutions associated with accurate measurements.

Specifications and Challenges
Solder bumps are crucial for connecting die to package components. Accurate bump height and coplanarity are essential for reliable connections. Traditional methods face challenges, especially with the elimination of the under bump metal (UBM) layer in wafer-level chip scale packages (WLCSP), which introduces errors in measurements due to the semitransparent protective layer (PL).

Measurement Techniques
Laser triangulation (LT) is fast but inaccurate due to its inability to precisely measure the PL's top surface. This results in a need for offset adjustments, which vary with PL thickness, affecting accuracy and repeatability.

New Approach: Interferometric Technique
A new method using a visible thickness and shape sensor (VTSS) combines interferometry and reflectometry to accurately measure bump height and PL thickness. VTSS provides nanometer-scale accuracy and is effective for thin films, unlike chromatic confocal (CC) measurements.

Results and Comparisons
Comparative studies show that VTSS measurements are more accurate than LT, with a consistent offset of 2.123µm. Repeatability studies demonstrate VTSS's superior accuracy and reliability.

Conclusions
Accurate bump height and coplanarity measurements are vital to reduce yield losses and review time. While LT is fast, its inaccuracies necessitate calibration with VTSS, which, despite being slower, offers precise calibration. Combining both technologies ensures fast, accurate measurements, minimizing unnecessary yield loss and review time.
See more

Catalog excerpts

Improving the Accuracy of Bump Height and Coplanarity Measurement-1

SEMICONDUCTORS PACKAGING • MEMS • LEDS • DISPLAYS DECEMBER 2016 SEMICONDUCTORS PACKAGING • MEMS • LEDS • DISPLAYS DECEMBER 2016 Insights for El ^ MRAM Takes State NOLOGY ctronics Manufacturing www.solid-state.co MEDIA

 Open the catalog to page 1
Improving the Accuracy of Bump Height and Coplanarity Measurement-2

Improving the accuracy of bump height and coplanarity measurement SCOTT BALAK , Rudolph Technologies, Inc., Bloomington, MN A new approach to bump height measurements uses an interferometric technique to accurately measure bump height and PL thickness older bumps are used to connect die to various package components in advanced packaging processes. Bump height and coplanarity are critical to ensuring reliable connections. A bump that is not high enough will not connect, while one that is too tall may prevent connection by neighboring bumps or even damage an electrical tester’s probing card. Measuring...

 Open the catalog to page 2
Improving the Accuracy of Bump Height and Coplanarity Measurement-3

between the chip and the substrate. In addition to eliminating the IMC as a source of failure, UFI reduces package cost and cycle time by eliminating layers, and allows a significant reduction in final package thickness. Unfortunately, the PL layer, which is semitransparent and varies in thickness, introduces errors in bump height measurements (FIGURE 1). Many technologies are available that can accurately measure bump height but are too slow to inspect the millions of bumps on a full wafer. Laser triangulation (LT) is fast enough but has difficulty accurately measuring the top surface of the...

 Open the catalog to page 3
Improving the Accuracy of Bump Height and Coplanarity Measurement-4

FIGURE 7. Corrected LT bump height measurements from a full wafer 100% inspection. FIGURE 5. A comparison of VTSS and LT bump height measurements shows a consistent offset. In this example the LT measurement exceeds the more accurate VTSS measurement by an average of 2.123μm. FIGURE 6 shows the results of a repeatability study in which bump heights were measured for ~12,000 bumps from 13 dies across a wafer. The accompanying wafer map shows the locations of the sampled die. 3D height inspection was performed using 5µm spot sensors. The repeatability test was dynamic, meaning the wafer was unloaded...

 Open the catalog to page 4
*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.