BTA2008-600D 3Q Hi-Com Triac
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BTA2008 series D and E 0.8 A Three-quadrant triacs high commutation Rev. 01 — 18 January 2008 Product data sheet 1. Product prole 1.1 General description Passivated, guaranteed commutation, sensitive gate triacs in a SOT54 plastic package 1.2 Features I Guaranteed commutation performance at each gate sensitivity I Sensitive gate I Easily interfaced with low power drivers including microcontrollers 1.3 Applications I Motor control I Solenoid drivers 1.4 Quick reference data I I I I I VDRM ≤ 600 V (BTA2008-600D) VDRM ≤ 600 V (BTA2008-600E) VDRM ≤ 800 V (BTA2008-800D) VDRM ≤ 800 V (BTA2008-800E) ITSM ≤ 9 A (t = 20 ms) I I I I I IGT ≤ 5 mA (BTA2008-600D) IGT ≤ 5 mA (BTA2008-800D) IGT ≤ 10 mA (BTA2008-600E) IGT ≤ 10 mA (BTA2008-800E) IT(RMS) ≤ 0.8 A 2. Pinning information Table 1. Pinning Pin Description Simplied outline Graphic symbol 1 main terminal 2 (T2) 2 gate (G) T2 3 main terminal 1 (T1) sym051 T1 G 321 SOT54 (TO-92)

BTA2008 series D and E NXP Semiconductors 0.8 A Three-quadrant triacs high commutation 3. Ordering information Table 2. Ordering information Type number Package Name Version TO-92 BTA2008-600D Description plastic single-ended leaded (through hole) package; 3 leads SOT54 BTA2008-600E BTA2008-800D BTA2008-800E 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions BTA2008-600D; BTA2008-600E Max Unit - 600 V BTA2008-800D; BTA2008-800E - 800 V - 0.8 A t = 20 ms - 9 A t = 16.7 ms VDRM repetitive peak off-state...

BTA2008 series D and E NXP Semiconductors 0.8 A Three-quadrant triacs high commutation 003aac118 1.0 Ptot (W) conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 0.8 0.6 α = 180° 120° 90° α 60° 30° 0.4 0.2 0.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 IT(RMS) (A) 0.9 α = conduction angle Fig 1. Total power dissipation as a function of RMS on-state current; maximum values 003aac116 12 ITSM (A) 8 ITSM IT 4 t 1/f Tj(init) = 25 °C max 0 1 102 10 103 number of cycles f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles;...

BTA2008 series D and E NXP Semiconductors 0.8 A Three-quadrant triacs high commutation 003aac119 103 ITSM IT ITSM (A) t tp Tj(init) = 25 °C max (1) 102 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms (1) dIT/dt limit Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values 003aac117 12 I T(RMS) (A) 10 003aac115 1 IT(RMS) (A) 0.8 8 0.6 6 0.4 4 0.2 2 0 10-2 10-1 0 -50 1 10 surge duration (s) 0 50 100 150 Tlead (°C) f = 50 Hz Tlead = 70 °C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of...

BTA2008 series D and E NXP Semiconductors 0.8 A Three-quadrant triacs high commutation 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Rth(j-lead) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from junction to full cycle; see Figure 6 lead - - 60 K/W thermal resistance from junction to printed circuit board ambient mounted; lead length 4 mm - 150 - K/W 003aac206 102 Zth(j-lead) (K/W) 10 1 P 10−1 tp 10−2 10−5 Fig 6. 10−4 10−3 10−2 10−1 1 tp (s) t 10 Transient thermal impedance from junction to lead as a function of pulse duration BTA2008_SER_D_E_1...

BTA2008 series D and E NXP Semiconductors 0.8 A Three-quadrant triacs high commutation 6. Static characteristics Table 5. Static characteristics Tj = 25 °C unless otherwise specied. Symbol Parameter Conditions BTA2008-600D BTA2008-800D BTA2008-600E BTA2008-800E Unit Min Max Min Typ Max 0.25 - 5 0.5 - 10 mA T2+ G− 0.25 - 5 0.5 - 10 mA T2− G− 0.25 - 5 0.5 - 10 mA T2+ G+ - - 10 - - 12 mA T2+ G− - - 20 - - 20 mA T2− G− IL Typ T2+ G+ IGT - - 10 - - 12 mA - - 10 - - 12 mA gate trigger current VD = 12 V; IT = 0.1 A; see Figure 8 latching current VD = 12 V; IGT = 0.1 A; see Figure 10 IH holding...

BTA2008 series D and E NXP Semiconductors 0.8 A Three-quadrant triacs high commutation 7. Dynamic characteristics Table 6. Dynamic characteristics Symbol Parameter Conditions BTA2008-600D BTA2008-800D BTA2008-600E BTA2008-800E Min Typ Max Min Typ Unit Max dVD/dt rate of rise of off-state voltage VDM = 0.67 × VDRM(max); Tj = 125 °C; exponential waveform; gate open circuit 200 - - 600 - - V/µs dIcom/dt rate of change of commutating current VDM = 400 V; Tj = 125 °C; IT(RMS) = 0.8 A; dV/dt = 10 V/µs; gate open circuit 0.5 - - 1.6 - - A/ms tgt gate-controlled turn-on time ITM = 1 A; VD =...

BTA2008 series D and E NXP Semiconductors 0.8 A Three-quadrant triacs high commutation 003aac114 1 IT (A) 001aab100 3 IL 0.8 IL(25°C) 2 0.6 (2) (1) 0.4 (3) 1 0.2 0 0 0.5 1 1.5 VT (V) 0 −50 2 0 50 100 150 Tj (°C) Vo = 0.835 V Rs = 0.5 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current as a function of on-state voltage Fig 10. Normalized latching current as a function of junction temperature 001aab099 3 IH IH(25°C) 2 1 0 −50 0 50 100 150 Tj (°C) Fig 11. Normalized holding current as a function of junction temperature...

BTA2008 series D and E NXP Semiconductors 0.8 A Three-quadrant triacs high commutation 8. Package outline Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e1 e 2.54 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC SOT54 JEDEC JEITA TO-92 SC-43A EUROPEAN PROJECTION...

BTA2008 series D and E NXP Semiconductors 0.8 A Three-quadrant triacs high commutation 9. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BTA2008_SER_D_E_1 20080118 Product data sheet - - BTA2008_SER_D_E_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 18 January 2008 10 of 12