BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Table 1. Test information Typical RF performance measured in common source class-AB test circuit at PL = 250 W and 960 MHz to 1215 MHz frequency band. Th = 25 °C; Zth(j-h) = 0.15 K/W; unless otherwise specified. f tp δ VDS PL (MHz) (μs) % (V) (W) (dB) (dB) (%) (dB) (ns) (ns) (K/W) (deg) all modes 960 to 1215 100 10 36 250 13.5 0.8 50 0.1 25 6 0.18 ±5 TCAS 1030 to 1090 32 0.1 36 250 14.0 0.8 50 0 25 6 0.07 ±5 Mode-S 1030 to 1090 128 2 250 13.5 0.8 50 0.1 25 6 0.15 ±5 1030 to 1090 340 1 JTIDS 960 to 1215 3300 22 Mode of operation 36 Gp ΔGp ηD Pdroop(pulse) tr tf Zth(j-h) ϕins(rel) 36 250 13.5 0.8 50 0.2 25 6 0.20 ±5 36 200 13.0 1.2 45 0.2 25 6 0.45 ±5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance. 1.3 Applications Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS and JTIDS, DME or TACAN.

BLA0912-250 NXP Semiconductors Avionics LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 Simplified outline source Graphic symbol 1 1 3 [1] 2 2 3 sym039 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version - BLA0912-250 flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 75 V VGS gate-source voltage...

BLA0912-250 NXP Semiconductors Avionics LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 °C; per section unless otherwise specified. Symbol Parameter Conditions Min Max Unit 75 V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3 mA Typ - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 300 mA 4 - 5 V IDSS drain leakage current VGS = 0 V; VDS = 36 V - - 1 μA IDSX drain cut-off current VGS = VGSth + 9 V; VDS = 10 V 45 - - A IGSS gate leakage current VGS = 20 V; VDS = 0 V - - 1 μA gfs forward transconductance VDS = 10 V; ID = 10 A - 9 - S RDS(on) drain-source...

BLA0912-250 NXP Semiconductors Avionics LDMOS transistor 7. Application information 7.1 Impedance information Table 8. Typical impedance Typical values per section unless otherwise specified. f ZS ZL MHz Ω Ω 960 0.89 − j1.70 1.53 − j1.13 1030 1.37 − j1.23 1.47 − j0.99 1090 2.09 − j1.27 1.38 − j0.85 1140 2.40 − j1.97 1.30 − j0.71 1215 1.51 − j2.61 1.17 − j0.47 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.2 Application circuit L2 L1 C1 L3 L5 L4 C2 C3 C4 L6 L7 L8 C5 001aab085 See Table 9 for details of striplines. Fig 2. BLA0912-250 Product data sheet Layout of class-AB...

BLA0912-250 NXP Semiconductors Avionics LDMOS transistor Table 9. Layout details See Figure 2. Striplines are on a Rodgers Duroid 6010 Printed-Circuit Board (PCB); εr = 10.2 F/m; thickness = 0.64 mm Component Description Dimensions stripline 5 mm × 0.8 mm Input circuit L1 C1 stripline 1.2 mm × 3.5 mm L2 stripline capacitor pad: 1 mm × 1 mm (1×) curve: width 0.8 mm; angle 90°; radius 0.8 mm (10×) vertical: 3.9 mm × 0.8 mm (2×) vertical: 9.4 mm × 0.8 mm (3×) horizontal: 0.5 mm × 0.8 mm (4×) L3 stripline 3 mm × 2 mm C2 stripline 4 mm × 6.5 mm L4 stripline 5 mm × 1 mm C3 stripline 8.8 mm × 30 mm...

BLA0912-250 NXP Semiconductors Avionics LDMOS transistor 40 C1 C2 C3 C4 40 C5 C8 C9 C10 R1 R2 60 C7 C6 001aab083 Dimensions in mm. See Table 10 for list of components. Fig 3. Component layout for class-AB application circuit Table 10. List of components See Figure 3. Component Description Value Remarks C1, C3, C9 multilayer ceramic chip capacitor 1 nF [1] C2, C6, C10 multilayer ceramic chip capacitor 22 pF [2] C4 tantalum SMD capacitor 47 μF; 20 V KEMET: T491D476M020AS C5 multilayer ceramic chip capacitor 56 pF [2] C7 multilayer ceramic chip capacitor 47 pF [2] C8 tantalum SMD capacitor 22 μF;...

BLA0912-250 NXP Semiconductors Avionics LDMOS transistor 8. Test information 8.1 RF performance Typical RF performance measured in common source class-AB test circuit at PL = 250 W and 960 MHz to 1215 MHz frequency band. Th = 25 °C; Zth(j-h) = 0.15 K/W; unless otherwise specified. 001aab078 15 ηD Gp (dB) 13 ηD (%) 45 Gp Gp (dB) (5) 16 (2) 14 (1) 12 35 11 001aab079 18 55 (4) (3) 10 9 25 7 15 8 6 4 5 940 990 1040 1090 1140 1190 f (MHz) 5 1240 2 0 100 200 300 PL(W) Th = 25 °C; VDS = 36 V; IDq = 150 mA; class-AB; tp = 100 μs; δ = 10 %. Th = 25 °C; VDS = 36 V; IDq = 150 mA; class-AB; tp = 100 μs;...

BLA0912-250 NXP Semiconductors Avionics LDMOS transistor 001aab080 300 001aab081 60 (2) (5) (1) 50 250 PL (W) 200 (1) (5) ηD (%) 40 (4) (2) (4) (3) (3) 150 30 100 20 50 10 0 0 0 2 4 6 8 10 12 14 16 Pi (W) 0 Th = 25 °C; VDS = 36 V; IDq = 150 mA; class-AB; tp = 100 μs; δ = 10 %. 50 100 150 200 250 PL (W) 300 Th = 25 °C; VDS = 36 V; IDq = 150 mA; class-AB; tp = 100 μs; δ = 10 %. (1) f = 960 MHz (1) f = 960 MHz (2) f = 1030 MHz (2) f = 1030 MHz (3) f = 1090 MHz (3) f = 1090 MHz (4) f = 1140 MHz (4) f = 1140 MHz (5) f = 1215 MHz (5) f = 1215 MHz Fig 6. Load power as a function of input power; typical...

BLA0912-250 NXP Semiconductors Avionics LDMOS transistor 10. Abbreviations Table 11. Abbreviations Acronym Description DC Direct Current DME Distance Measuring Equipment JTIDS Joint Tactical Information Distribution System LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor Mode-S Mode Select RF Radio Frequency SMD Surface Mounted Device TACAN TACtical Air Navigation TCAS Traffic Collision Avoidance System VSWR Voltage Standing-Wave Ratio 11. Revision history Table 12. Revision history Document ID Release date Data sheet status Change...