BGA2001 Silicon MMIC amplifie
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BGA2001 Silicon MMIC amplifie - 1

DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BGA2001 Silicon MMIC amplifier Product specification Supersedes data of 1999 Jul 23 1999 Aug 11

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BGA2001 Silicon MMIC amplifie - 2

NXP Semiconductors Product specification Silicon MMIC amplifier BGA2001 FEATURES PINNING Low current, low voltage PIN DESCRIPTION Very high power gain 1 GND Low noise figure 2 RF in Integrated temperature compensated biasing 3 GND Supply and RF output pin combined. 4 VS + RFout APPLICATIONS RF front end Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) VS+RFout handbook, halfpage 3 4 Radar detectors BIAS CIRCUIT Low noise amplifiers Satellite television tuners (SATV) 2 High frequency oscillators. 1 Top view MAM430 RFin GND DESCRIPTION...

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BGA2001 Silicon MMIC amplifie - 3

NXP Semiconductors Product specification Silicon MMIC amplifier BGA2001 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VS supply voltage RF input AC coupled 4.5 V IS supply current (DC) forced by DC voltage on RF input 30 mA Ts 100 C Ptot total power dissipation 135 mW Tstg storage temperature 65 +150 C Tj operating junction temperature 150 C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER VALUE UNIT 350 K/W thermal resistance from junction to soldering point CHARACTERISTICS RF input AC coupled; Tj = 25 C; unless...

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BGA2001 Silicon MMIC amplifie - 4

NXP Semiconductors Product specification Silicon MMIC amplifier BGA2001 MGS606 200 handbook, halfpage 100 pF handbook, halfpage Ptot (mW) R1 VS L1 150 C RF out GND VS-OUT 100 BGA2001 IN GND 50 C RF in 0 MGS605 0 50 Fig.2 Typical application circuit. 100 150 200 Fig.3 Power derating curve. MGS607 12 Ts (°C) MGS608 16 handbook, halfpage handbook, halfpage IVS-OUT IVS-OUT (mA) 10 (mA) (8) 12 (7) 8 (6) 8 (5) 6 (4) 4 (3) 4 (2) 2 (1) 0 0 −40 (1) (2) (3) (4) 0 VVS-OUT = 1 V VVS-OUT = 1.5 V VVS-OUT = 2 V VVS-OUT = 2.5 V Fig.4 40 80 0 120 Tamb (°C) 2 3 4 VVS-OUT (V) 5 (5) VVS-OUT = 3 V (6) VVS-OUT =...

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BGA2001 Silicon MMIC amplifie - 5

NXP Semiconductors Product specification Silicon MMIC amplifier BGA2001 MGS609 30 gain (dB) 25 MGS610 25 handbook, halfpage handbook, halfpage gain (dB) GUM 20 MSG MSG 20 GUM 15 15 10 10 5 5 0 0 0 2 4 6 8 10 IVS-OUT (mA) 0 2 f = 900 MHz. Fig.7 6 8 10 IVS-OUT (mA) f = 1800 MHz. Fig.6 4 Gain as a function of bias current (IVS-OUT); typical values. MGS611 40 Gain as a function of bias current (IVS-OUT); typical values. MGS612 3 min (dB) 2.5 handbook, halfpage NF handbook, halfpage gain (dB) GUM (1) 30 2 MSG (2) (3) (4) 1.5 20 Gmax 1 10 0.5 0 102 103 f (MHz) 0 10−1 104 VVS-OUT = 2.5 V; IVS-OUT...

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BGA2001 Silicon MMIC amplifie - 6

NXP Semiconductors Product specification Silicon MMIC amplifier BGA2001 handbook, full pagewidth 90° unstable region source 1.0 +1 135° 45° +2 + 0.5 unstable region load 0.8 0.6 + 0.2 (1) 180° 0.2 0 0.4 +5 0.5 (2) Γopt 1 0.2 2 5 0° (4) (3) 0 (5) f = 900 MHz; VVS-OUT = 2.5 V; IVS-OUT = 4 mA; Zo = 50 . (1) (2) (3) (4) (5) (6) − 0.2 G = 22 dB G = 21 dB G = 20 dB NF = 1.3 dB NF = 1.5 dB NF = 1.7 dB. −5 (6) − 0.5 −135° −2 − 45° −1 1.0 − 90° MGS613 Fig.10 Noise, stability and gain circles; typical values. handbook, full pagewidth 90° unstable region source 135° unstable region load 1.0 +1 + 0.5...

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BGA2001 Silicon MMIC amplifie - 9

NXP Semiconductors Product specification Silicon MMIC amplifier BGA2001 PACKAGE OUTLINE Plastic surface-mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-05-21 06-03-16 SOT343R 1999 Aug 11 EUROPEAN PROJECTION 9

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BGA2001 Silicon MMIC amplifie - 10

NXP Semiconductors Product specification Silicon MMIC amplifier BGA2001 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this...

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BGA2001 Silicon MMIC amplifie - 11

NXP Semiconductors Product specification Silicon MMIC amplifier BGA2001 Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and...

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BGA2001 Silicon MMIC amplifie - 12

NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to:...

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