2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET
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2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - 60 V VGS gate-source voltage Tamb = 25 °C - - ±20 V ID drain current Tamb = 25 °C; VGS = 10 V - - 300 mA RDSon drain-source on-state resistance Tj = 25 °C; VGS = 10 V; ID = 500 mA - 1 1.6 Ω [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 S1 source 1 2 G1 gate 1 3 D2 drain 2 4 S2 source 2 5 G2 gate 2 6 D1 drain 1 Simplified outline 6 Graphic symbol 4 5 1 2 3 2 5 3 1 6 4 017aaa055 3. Ordering information Table 3. Ordering information Type number Package Name 2N7002BKS Description Version SC-88 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 4. Marking codes Type number Marking code[1] 2N7002BKS ZT* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia...

2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 μs - 1.2 A Ptot total power dissipation Tamb = 25 °C [2] - 295 mW [1] - 340 mW - 1040 mW Tsp = 25 °C Source-drain diode Tamb = 25 °C [1] - 300 mA electrostatic discharge voltage human body model [3] - 2000 V Ptot total power dissipation Tamb = 25 °C [2] - 445 mW Tj junction temperature 150 °C Tamb ambient temperature −55...

2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 017aaa056 10 ID (A) Limit RDSon = VDS/ID 1 (1) (2) 10−1 (3) (4) (5) 10−2 (6) 10−3 10−1 1 102 10 VDS (V) IDM = single pulse (1) tp = 100 μs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions Min Typ Max Unit [1] - 370 425 K/W [2] - 320 370 K/W - - 120 K/W...

2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 017aaa057 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.25 102 0.33 0.2 0.1 0 10 0.05 0.02 0.01 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa058 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.33 0.25 0.05 0 10 0.2 0.1 0.02 0.01 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse...

2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 60 - - V 1.1 1.6 2.1 V Tj = 25 °C - - 1 μA Tj = 150 °C - - 10 μA - - 10 μA - 1.3 2 Ω - 1 1.6 Ω - 550 - mS - 0.5 0.6 nC - 0.2 - nC - 0.1 - nC - 33 50 pF - 7 - pF - 4 - pF - 5 10 ns - 6 - ns - 12 24 ns - 7 - ns 0.47 0.75 1.1 V Static characteristics V(BR)DSS drain-source breakdown ID = 10 μA; VGS = 0 V voltage VGS(th) gate-source threshold voltage ID = 250 μA; VDS = VGS IDSS drain leakage current...

2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 017aaa039 0.7 VGS = 4.0 V ID (A) 0.6 017aaa040 10−3 3.5 V ID (A) 3.25 V 0.5 10−4 (1) 0.4 (3) (2) 3.0 V 0.3 10−5 2.75 V 0.2 2.5 V 0.1 0.0 0.0 1.0 2.0 3.0 4.0 10−6 0.0 1.0 2.0 VDS (V) 3.0 VGS (V) Tamb = 25 °C Tamb = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. 017aaa041 6.0 RDSon (Ω) Sub-threshold drain current as a function of gate-source voltage 017aaa042 6.0 RDSon (Ω) (1) 4.0 4.0 (2) (3)...

2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 017aaa043 1.0 ID (A) 017aaa044 2.4 a 0.8 (1) 1.8 (2) 0.6 1.2 0.4 0.6 0.2 0.0 0.0 1.0 2.0 3.0 4.0 5.0 VGS (V) 0.0 −60 VDS > ID × RDSon 0 60 120 180 Tamb (°C) R DSon a = ----------------------------R DSon ( 25°C ) (1) Tamb = 25 °C (2) Tamb = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa045 3.0 VGS(th) (V) Fig 11. Normalized drain-source on-state resistance as a function of ambient temperature; typical values 017aaa046 102 (1) C (pF) (1) 2.0 (2) (2) 10 (3)...

2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 017aaa047 5.0 VGS (V) 4.0 VDS ID 3.0 VGS(pl) 2.0 VGS(th) VGS 1.0 QGS1 0.0 0.0 QGS2 QGS 0.2 0.4 0.6 0.8 QG (nC) QGD QG(tot) 003aaa508 ID = 300 mA; VDD = 6 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa048 1.2 IS (A) 0.8 (1) (2) 0.4 0.0 0.0 0.4 0.8 1.2 VSD (V) VGS = 0 V (1) Tamb = 150 °C (2) Tamb = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values 2N7002BKS Product data sheet All information provided...