SINGLE EMITTER DIODE LASER DEVICES (VISIBLE)

Product catalog summary

Overview
nLIGHT Corporation offers high-power semiconductor lasers and fibers, focusing on visible single emitter diode laser devices. These devices are available in c-mount and HHL packages, providing high power and brightness with a small emitting aperture and low beam divergence.

Specifications
Visible single emitter devices are available in wavelengths of 639 nm, 665 nm, 680 nm, and 690 nm. They feature high power, high brightness, long lifetime, narrow spectral linewidth, and high polarization purity. The devices are designed using nLIGHT's proprietary MOCVD-grown laser structure, ensuring reliability and longevity.

Applications
These lasers are suitable for various applications, including display, photodynamic therapy (PDT), biochemistry, military, solid-state laser pumping, materials processing, medical therapeutics, and graphic arts.

Device Specifications

Optical: Center wavelengths range from 639 nm to 690 nm with CW output power from 0.75 W to 1.5 W. The spectral width is less than 3 nm, and slope efficiency is greater than 1 W/A.
Electrical: Total conversion efficiency ranges from 20% to 25%, with operating currents around 1500 to 1900 mA and operating voltages around 2.08 to 2.2 V.
Mechanical: Lead soldering temperatures are 150°C for C-mount and 250°C for HHL, with a thermal resistance of 10°C/W.
Thermal: Operating temperature ranges are -20 to +30°C for C-mount and -20 to +50°C for HHL, with storage temperatures from -20 to +80°C.

Regulatory Compliance
The components do not comply with federal regulation (Title 21 CFR, Chapter 1, Subchapter J) and must be compliant before being sold to end-users.

Notice
nLIGHT reserves the right to make changes to specifications and product descriptions without notice. A limited warranty is offered for customer satisfaction.

Catalog excerpts

SINGLE EMITTER DIODE LASER DEVICES (VISIBLE)-1

nLIGHTs visible single emitter devices, consisting of c-mount and HHL (high-heat-load) packages provide state-of-the-art power and brightness. The small emitting aperture, combined with low beam divergence, make these devices the highest-brightness family of CW visible diode lasers available in the industry. Visible single emitter devices are available in wavelengths at 639 nm, 665 nm, 680 nm, and 690 nm. These commercially recognized formats allow easy integration into your existing products. nLIGHTҒs diode laser design is based on the companys proprietary MOCVD-grown laser structure, which results in highly reliable, long lifetime products. > Display High power PDT High brightness Biochemistry Long lifetime Military Narrow spectral linewidth Solid-state laser pumping High polarization purity Materials processing Medical therapeutics Graphic arts > nLIGHT Corporation ҕ 5408 NE 88 th Street Vancouver, WA 98665 Օ USA Tel. +1 360 566 4460 Fax. +1 360 546 1960 Օ [email protected] www.nlight.net size="-1">

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SINGLE EMITTER DIODE LASER DEVICES (VISIBLE)-2

C-0.75-0639 C-1.5-0665 C-1.5-0680 C-1.5-0690 Optical Center wavelength nm 639 665 680 690 CW output power W 0.75 1.5 1.5 1.5 Center wavelength tolerance nm 4 ѱ 5 5 ѱ 5 Emitter size m 150 150 150 150 Spectral width (FWHM) nm < 3 < 3 < 3 < 3 Slope efficiency W / A > 1 > 1 > 1 > 1 Polarization TM or TE TM TE TE TE Fast-axis divergence Degrees 42հ 43 43а 43 Slow-axis divergence Degrees 10а 10 10а 10 Wavelength temperature coefficient > 1 nm / аC 0.15 0.15 0.15 0.15 Electrical Total conversion efficiency % 20 25 25 25 Threshold current (I > TH ) mA 700 660 668 680 Operating current (I > OP ) mA 1500...

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SINGLE EMITTER DIODE LASER DEVICES (VISIBLE)

SINGLE EMITTER DIODE LASER DEVICES (VISIBLE)

Catalog excerpts

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