High Temperature / Multi-color QCW Stacked Array QD-Q1yzz-B(n) / QD-Q1yzz-BS(n) / QD-Q1yzz-G(n) / QD-Q1yzz-J(n) DESCRIPTION QD-Q1yzz-B(n), QD-Q1yzz-BS(n), and QD-Q1yzz-G(n) are a variety of conductively cooled laser diode stacked arrays with a design adapted for a reliable operation over extremely severe temperature range. These Stacks can be built from 1 to 19 diode bars of 60W QCW to 400W QCW. The laser diode bar arrays benefit from a fully mastered technology, with the appropriate design for improved efficiency and performing reliable at high temperature of operation. The possibility for mixing diode bars of different wavelength gives a broad optical spectrum of emission. This performance is well suited for building efficient pumping skim in a non stabilized environment in temperature. Assembly, using AuSn hard solder technology, in a compact and rugged package allows easy and efficient connection which is ideal for a large range of defence, aerospace, industrial applications: pumping rods or slabs solid state lasers, illuminators... MAIN FEATURES • QCW operation up to 400W QCW per diode bar • Hard solder technology • High efficiency over a very large operating temperature range • Possibility of Multi-color emission and collimation • Low thermal resistance assembly • Mechanically robust, shock and vibration resistant SPECIFICATIONS Case temperature: + 25° C Quasi-continuous mode: pulse width repetition rate Number of Diode bars (pith = 400µm) zz = Pitch between diode bars QCW Optical Power per Diode Bar QCW Optical Power Emitting area Operating current Operating current Operating current Wavelength variation with Temperature Beam divergence (FWHM) Operating voltage Total efficiency Wavelength Note : • Standard Polarisation: TM or TE mode • Tolerance on wavelength is +/- 3nm, +/- 1,5 nm on demand • Other wavelength selections are available (9xx nm) 9 • Specifications are for nominal lifetime > 1. 10 pulses @ 25° and > 0.3 10 pulses @ +75° (for 200µs pulse width) C C Quantel Laser Diodes reserves the right to change specifications withou

ABSOLUTE MAXIMUM RATINGS PARAMETERS Pulse width Maximum duty cycle Reverse voltage Operating temperature Storage temperature Note : Operation at temperature below dew point requests to use dry N2 environment PACKAGE SPECIFICATIONS - dimensions are in mm - standard tolerances are + 0.2 mm This stack “B” type can be proposed with a variable number (‘zz’) of diode bars: ‘zz’ = 1 to 12 bars at a pitch of 330µm, ‘zz’ = 1 to 11 bars at a pitch of 400µm, ‘zz’= 1 to 8 bars at a pitch of 500µm

This stack “BS” type can be proposed with a variable number (‘zz’) of diode bars: ‘zz’ = 1 to 19 bars at a pitch of 400µm, ‘zz’ = 1 to 15 bars at a pitch of 500µm ‘zz’ = 1 to 6 bars at a pitch of 1000µm This stack “BS” type can be proposed with a variable number (‘zz’) of diode bars. ‘zz’ = 1 to 19 bars at a pitch of 400µm, ‘zz’= 1 to 15 bars at a pitch of 500µm ‘zz’ = 1 to 6 bars at a pitch of 1000µm