LONGi P-Type Monocrystalline Wafer Specification
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Catalog excerpts

LONGi P-Type Monocrystalline Wafer Specification - 1

隆基绿能科技股份有限公司 中国陕西省西安市长安区航天中路 388 号 710100 www.longi-silicon.com longisilicon@longi-silicon.com LONGi P-Type Monocrystalline Wafer Specification 隆基 P 型单晶硅片规格书(Res0.5-1.5-M6) 1、Material properties 材料性能 Property 项目 Growth method Conductivity type Inspection Method 检测方法 Oxygen concentration [Oi] 间隙氧含量 Carbon Concentration [Cs] 替位碳含量 -Preferential Etch Techniques (ASTM F47-88) 择优化学腐蚀法 Napson EC-80TPN P/N 型测试仪 -FTIR (ASTM F121-83) Etch pit density (dislocation density) Preferential Etch Techniques ≤ 500 cm Surface orientation 表面晶向 择优化学腐蚀法 X-ray Diffrac

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LONGi P-Type Monocrystalline Wafer Specification - 2

隆基绿能科技股份有限公司 中国陕西省西安市长安区航天中路 388 号 710100 www.longi-silicon.com longisilicon@longi-silicon.com 2、Electrical properties 电性能 Property 项目 Resistivity 电阻率 Inspection Method 检测方法 wafer inspection system MCLT (Minority carrier lifetime) QSSPC 准稳态光电导衰减法 /Transient 瞬态光电导衰减法 (with injection level: 1E15 cm-3) pseudo square Bevel edge shape Inspection Method 检测方法 Wafer Side length 硅片边距 wafer inspection system 166±0.25 mm Wafer Diameter 硅片直径 Angle between adjacent sides 垂直度 wafer inspection system φ223±0.25 mm 硅片自动检测设备 wafer inspection system

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LONGi P-Type Monocrystalline Wafer Specification - 3

隆基绿能科技股份有限公司 中国陕西省西安市长安区航天中路 388 号 710100 www.longi-silicon.com longisilicon@longi-silicon.com 4、Surface properties 表面性能 Property 项目 Cutting method 切割方式 Inspection Method 检测方法 as cut and cleaned, no visible contamination, (oil or grease, finger Surface prints, spot stains, epoxy/glue residue wafer inspection system 硅片自动检测设备 are not allowed) 表面洁净,无可见污染(不允许有油 污,指印,花斑,砂浆残留,胶残留) wafer inspection system wafer inspection system 硅片自动检测设备 wafer inspection system 硅片自动检测设备 depth ≤0.3mm and length ≤ 0.5mm Chip

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