LONGi P-Type M2 Monocrystalline Brick Specification

Product catalog summary

Material Properties
The LONGi P-Type M2 Monocrystalline Brick is produced using the Czochralski (CZ) growth method, ensuring monocrystalline crystallinity. It is a P-type conductivity material doped with Boron. The oxygen concentration is ≤9E+17 at/cm³ and carbon concentration is ≤5E+16 at/cm³, both measured using FTIR. The etch pit density is ≤500 cm⁻², and the surface orientation is <100> ±3°, with pseudo square sides oriented at <010>, <001> ±3°.

Electrical Properties
The resistivity of the material ranges from 0.5-1.5 Ω.cm and 0.8-2.6 Ω.cm after annealing, measured using a 4-probe resistivity measurement. The minority carrier lifetime (MCLT) is ≥20µs, determined by the Sinton BCT-400 using QSSPC and transient photoconductance decay methods.

Geometry
The geometry of the brick is quasi-square with a diameter of 210 ±0.25 mm and flat-to-flat distance of 156.75 ±0.25 mm. The corner length is 8.5 ± 0.5mm, and angularity is 90±0.2°. The corner shape is round, and perpendicularity is ≤0.8 mm. Length specifications vary, with tolerances depending on the length.

Surface Properties
The surface quality prohibits stains, oil, scratches, cracks, pits, bumps, pinholes, and twin defects. Surface chips are not allowed, and arris chips must be inconsecutive, with less than 10 on the arris and a diameter ≤0.3mm. Surface roughness is specified as Ra≤0.6um for plane surfaces and Ra≤1.0um for cambered surfaces, measured with a surface roughness meter.

Catalog excerpts

LONGi P-Type M2 Monocrystalline Brick Specification-1

隆基绿能科技股份有限公司中国陕西省西安市长安区航天中路 388 号 710100 www.longi-silicon.com [email protected] LONGi P-Type M2 Monocrystalline Brick Specification 隆基 P 型 M2 单晶硅棒规格书 1、Material properties 材料性能 Property 项目 Growth method Conductivity type Oxygen concentration [Oi] 间隙氧含量 Carbon Concentration [Cs] 替位碳含量 -Preferential Etch Techniques （ASTM F47-88）择优化学腐蚀法 Napson EC-80TPN P/N 型测试仪 -FTIR (ASTM F121-83) Etch pit density (dislocation density) Preferential Etch Techniques ≤ 500 cm 位错密度 Surface orientation 表面晶向择优化学腐蚀法 X-ray Diffraction Method （ASTM F26-1987

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LONGi P-Type M2 Monocrystalline Brick Specification-2

隆基绿能科技股份有限公司中国陕西省西安市长安区航天中路 388 号 710100 www.longi-silicon.com [email protected] Inspection Method 检测方法 0.5-1.5 Ω.cm （After anneal）退火后测试四探针电阻率测试仪退火后测试 Other Sinton BCT-400 MCLT （Minority carrier lifetime） QSSPC 准稳态光电导衰减法 /Transient 瞬态光电导衰减法 (with injection level: 1E15 cm-3) Geometry 几何外形 Vernier caliper Vernier caliper Vernier caliper Corner length 弧长投影 Wide-seat square/ruler Angle ruler Corner shape 倒角边形状 Round shape Visual inspection

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LONGi P-Type M2 Monocrystalline Brick Specification-3

隆基绿能科技股份有限公司中国陕西省西安市长安区航天中路 388 号 710100 www.longi-silicon.com [email protected] 4、Surface properties 表面性能 Property 项目 Inspection Method 检测方法 Stain, Oil, Scratch, Crack, Pit, Bump, Pinhole and Twin defect are not allowed. Visual inspection Surface chip is not allowed; Arris: chips are inconsecutive: Less than 10 on the arris, dia≤0.3mm; Plane surface : Ra≤0.6um; Cambered surface : Ra≤1.0um Surface roughness meter

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