LONGi N-Type Monocrystalline Wafer Specification

Product catalog summary

Material Properties
The LONGi N-Type Monocrystalline Wafer is produced using the Czochralski (CZ) growth method, ensuring monocrystalline crystallinity. It is N-type with phosphorus as the dopant. The oxygen concentration is ≤ 8E+17 at/cm³ and carbon concentration is ≤ 5E+16 at/cm³, both measured using FTIR. The etch pit density is ≤ 500 cm^-2, and surface orientation is <100> ±3°.

Electrical Properties
The wafer has a resistivity range of 1.0-7.0 Ω.cm. The minority carrier lifetime (MCLT) is ≥1000 µs, measured using the Sinton BCT-400 transient method.

Geometry
The wafer is pseudo square with a bevel edge shape that is round. The side length is 166±0.25 mm, and the diameter is φ223±0.25 mm. The angle between adjacent sides is 90° ± 0.2°. Thickness varies from 150 to 180 µm with specific tolerances, and total thickness variation (TTV) is ≤ 27 µm.

Surface Properties
The cutting method used is diamond wire cutting. The surface must be clean with no visible contamination. Saw marks/steps are ≤ 15µm, bow and warp are ≤ 40 µm. Chips are limited to a depth of ≤0.3mm and length ≤ 0.5mm, with a maximum of 2 per piece and no V-chips allowed. Micro cracks/holes are not permitted.

Catalog excerpts

LONGi N-Type Monocrystalline Wafer Specification-1

隆基绿能科技股份有限公司中国陕西省西安市长安区航天中路 388 号 710100 www.longi-silicon.com [email protected] LONGi N-Type Monocrystalline Wafer Specification 隆基 N 型单晶硅片规格书（Res1.0-7.0-M6） 1、Material properties 材料性能 Property 项目 Growth method Conductivity type Inspection Method 检测方法 Oxygen concentration [Oi] 间隙氧含量 Carbon Concentration [Cs] 替位碳含量 Preferential Etch Techniques （ASTM F47-88）择优化学腐蚀法 Napson EC-80TPN P/N 型测试仪 -FTIR (ASTM F121-83) Etch pit density (dislocation density) Preferential Etch Techniques ≤ 500 cm-2 Surface orientation 表面晶向

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LONGi N-Type Monocrystalline Wafer Specification-2

隆基绿能科技股份有限公司中国陕西省西安市长安区航天中路 388 号 710100 www.longi-silicon.com [email protected] Inspection Method 检测方法 wafer inspection system 1.0-7.0 Ω.cm （Minority carrier lifetime） Transient 瞬态光电导衰减法 (with injection level: 5E14 cm-3) pseudo square Bevel edge shape Inspection Method 检测方法 Wafer Side length 硅片边距 wafer inspection system 166±0.25 mm Wafer Diameter 硅片直径 Angle between adjacent sides 垂直度 wafer inspection system φ223±0.25 mm 硅片自动检测设备 wafer inspection system wafer inspecti

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LONGi N-Type Monocrystalline Wafer Specification-3

隆基绿能科技股份有限公司中国陕西省西安市长安区航天中路 388 号 710100 www.longi-silicon.com [email protected] 4、Surface properties 表面性能 Property 项目 Cutting method 切割方式 Inspection Method 检测方法 as cut and cleaned, no visible contamination, (oil or grease, finger prints, Surface soap stains, slurry stains, epoxy/glue stains wafer inspection system 硅片自动检测设备 are not allowed) 表面洁净，无可见污染（不允许有油污，指印，花斑，砂浆残留，胶残留） Saw marks / steps 线痕/台阶 Bow 弯曲度 Warp 翘曲度 wafer inspection system 硅片自动检测设备 wafer inspection system 硅片自动检测设备 wafer inspection system 硅片自动检测设备

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