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LONGi N-Type M2 Monocrystalline Brick Specification

LONGi N-Type M2 Monocrystalline Brick Specification

LONGi N-Type M2 Monocrystalline Brick Specification

Product catalog summary
Material Properties
The LONGi N-Type M2 Monocrystalline Brick is produced using the Czochralski (CZ) growth method, ensuring monocrystalline crystallinity. It is N-type conductive, doped with phosphorus. The oxygen concentration is ≤ 8E + 17 at/cm3 and carbon concentration is ≤ 5E + 16 at/cm3, both measured using FTIR. The etch pit density is ≤ 500 cm-2, and surface orientation is <100> ±3°, with pseudo square sides oriented at <010>, <001> ±3°.
Electrical Properties
The resistivity of the material ranges from 0.2 to 12 Ω.cm, depending on specific conditions. The minority carrier lifetime is ≥1000 µs for resistivity greater than 1.0 Ω.cm and ≥500 µs for resistivity less than 1.0 Ω.cm, measured using the Sinton BCT-400 transient method.
Geometry
The geometry of the brick is quasi-square with a diameter of 210 ±0.25 mm and flat-to-flat distance of 156.75 ±0.25 mm. The corner length is 8.5 ± 0.5mm, with angularity at 90±0.2°. The corner shape is round, and perpendicularity is ≤0.8 mm. Length specifications vary, with tolerances depending on the length.
Surface Properties
The surface quality prohibits stains, oil, scratches, cracks, pits, bumps, pinholes, and twin defects. Surface chips are not allowed, and arris chips must be inconsecutive, with less than 10 on the arris and diameter ≤0.3mm. Surface roughness is Ra≤0.6um for plane surfaces and Ra≤1.0um for cambered surfaces.
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Catalog excerpts

LONGi N-Type M2 Monocrystalline Brick Specification-1

隆基绿能科技股份有限公司 中国陕西省西安市长安区航天中路 388 号 710100 www.longi-silicon.com [email protected] LONGi N-Type M2 Monocrystalline Brick Specification 隆基 N 型 M2 单晶硅棒规格书 1、Material properties 材料性能 Property 项目 Growth method Conductivity type Oxygen concentration [Oi] 间隙氧含量 Carbon Concentration [Cs] 替位碳含量 -Preferential Etch Techniques (ASTM F47-88) 择优化学腐蚀法 Napson EC-80TPN P/N 型测试仪 Etch pit density (dislocation density) Preferential Etch Techniques ≤ 500 cm 位错密度 Surface orientation 表面晶向 择优化学腐蚀法 X-ray Diffraction Method (ASTM F26-1987

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LONGi N-Type M2 Monocrystalline Brick Specification-2

隆基绿能科技股份有限公司 中国陕西省西安市长安区航天中路 388 号 710100 www.longi-silicon.com [email protected] Inspection Method 检测方法 Other MCLT (Minority carrier lifetime) 少子寿命 Sinton BCT-400 Transient 瞬态光电导衰减法 (with injection level: 5E14 cm-3) Geometry 几何外形 Quasi square Vernier caliper Vernier caliper Vernier caliper Corner length 弧长投影 Corner shape 倒角边形状 Round shape Perpendicularity 端面垂直度

 Open the catalog to page 2
LONGi N-Type M2 Monocrystalline Brick Specification-3

隆基绿能科技股份有限公司 中国陕西省西安市长安区航天中路 388 号 710100 www.longi-silicon.com [email protected] 4、Surface properties 表面性能 Property 项目 Inspection Method 检测方法 Surface quality 表面质量 Stain, Oil, Scratch, Crack, Pit, Bump, Pinhole and Twin defect are not allowed. Visual inspection Surface chip is not allowed; Arris: chips are inconsecutive: Less than 10 on the arris, dia≤0.3mm; Plane surface : Ra≤0.6um; Cambered surface : Ra≤1.0um Surface roughness meter

 Open the catalog to page 3

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