WAFER SUBSTRATE BONDING UNITS Premium bonding for the processing of fragile semiconductor wafers whilst retaining the highest quality of sample yield.

SUBSTRATE BONDING →→Available as a single or three station benchtop unit with a wafer process capacity of 4”/100mm or 6”/150mm - bond three part or whole wafers consistently with a high standard of support carrier parallelism. →→The full bonding process - evacuation of wafer chamber, heating, pressure bonding and cooling can be completed automatically by the WSBU’s in 45 minutes (depending on the mounting media, wafer size and parameter combination). →→The WSB300 floor standing model allows operators to bond materials and wafers up to 300mm/12” (or smaller multiple samples using a template) in...

TECHNICAL SPECIFICATIONS Single Station WSBU Triple Station WSBU Power Supply: Water Supply: Mains pressure cold water Vacuum Pump: 4” model: Torr 1.5 x 10 ˉ³ 6” model: mbar 2.0 x 10 ˉ³