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Power Semiconductor & IC
Power Semiconductor & IC
Littelfuse, established in 1927, is a global leader in industrial technology, specializing in power semiconductors and integrated circuits. The company is dedicated to innovation, reliability, and adherence to global regulations, offering solutions across multiple industries.
Littelfuse provides a wide range of power semiconductors and ICs, including fuses, semiconductors, polymers, ceramics, relays, sensors, and switches. Their products cater to applications from milliwatt to gigawatt solutions.
The company prioritizes operational excellence and quality assurance, complying with ISO 9001, ISO14001, and IATF 16949 standards. Littelfuse offers global support with facilities worldwide, ensuring local technical support and application knowledge.
Littelfuse provides testing support for product reliability under extreme conditions, including power fault and electrostatic discharge testing. With over 95 years of experience, they offer application knowledge to support engineers globally.
The guide details specifications for various product categories such as IGBT discretes, power MOSFETs, diodes, thyristors, rectifier modules, solid state relays, and gate driver ICs, each with specific features and applications.
Highlighted packages include PressFit-Pin, TO-247-4L, ISOPLUS-SMPD™, and ISOPLUS-DIL™, designed for specific application needs.
The guide includes a detailed nomenclature system for identifying product types, package types, and specifications, along with an alphanumeric index for easy reference.
Littelfuse offers a robust portfolio of power semiconductor and IC technologies, backed by quality assurance and global support, making it a reliable partner for innovative and efficient solutions.
IXYS introduces PressFit-Pin technology for E2 and E3 module packages, allowing PCB connections without soldering, simplifying assembly, reducing mounting time, and eliminating solder contact risks.
For E2 and E3 packages, the final hole diameter ranges from 2.14 mm to 2.29 mm, with copper thickness inside the hole greater than 25 µm. For SimBus F, the final hole diameter ranges from 1.00 mm to 1.10 mm. PCB thickness is typically 2.00 mm.
The document lists part numbers with respective technologies, configurations, and electrical ratings, such as the DMA10IM1200UZ diode rated at 1200 V and 10 A at 150°C.
High Voltage TO-252, TO-263, and TO-268 packages are highlighted, with minimum creepage distances specified for safety and performance.
This package offers high isolation capability and low thermal resistance due to its DCB substrate, improving reliability by reducing mechanical stress.
The document provides detailed specifications and advantages of various electronic components and packaging technologies, emphasizing the benefits of PressFit-Pin technology and ISOPLUS247™ packages for enhanced performance and reliability.
The document details specifications for Power MOSFETs, including N-Channel Depletion Mode FETs, P-Channel PolarPTM Power MOSFETs, and SiC MOSFETs, with technical data such as voltage ratings, current capacities, resistance, capacitance, and package types.
Key parameters include VDSS, ID, RDS(on), Ciss, Qg, and RthJC, crucial for selecting the appropriate MOSFET for specific applications.
Various package types are mentioned, such as TO-247AD, TO-268AA, SOT-227B miniBLOC, PLUS247, and ISOPLUS247™, each offering different thermal and electrical performance characteristics.
MOSFETs are used in industrial and telecommunications applications, particularly in solid-state relays and pre-regulator applications. SiC MOSFETs are noted for high-voltage and high-efficiency applications.
The document discusses third-generation vertical DMOS processes and the benefits of SiC MOSFETs over traditional silicon-based devices, including lower switching losses and improved efficiency.
The document covers various diodes, including Fast Recovery Epitaxial Diodes, Silicon Carbide Schottky Barrier Diodes, and general-purpose rectifier and avalanche diodes, with detailed tables listing part numbers, electrical characteristics, and packaging information.
Designed for high switching frequencies, these diodes are crucial for the efficiency of power switches like IGBTs and MOSFETs.
SiC Schottky diodes offer high efficiency and power density, with ultra-low switching losses.
This section covers rectifier diodes for standard AC line voltages and avalanche diodes that can handle voltage surges.
The document provides specifications for rectifier modules and bridges, focusing on electrical characteristics and applications, including single-phase and three-phase rectifier bridges.
Lists part numbers with electrical specifications such as VRRM, VvRMS, IdAV, IFSM, VF0, and thermal resistances.
Detailed tables provide specifications for 1-phase and 3-phase rectifier bridges, including those with standard and fast recovery diodes.
Discusses the use of semi-fast and fast recovery diodes to reduce noise levels and improve efficiency in power-switching applications.
Various package types are mentioned, including ISOPLUS i4-PAC™, ECO-PAC, V1-A-Pack, and others.
Rectifiers are used in inverter systems with DC-Link, highlighting the need for optimized designs to reduce harmonics and line distortion.
The document provides specifications and applications for solid-state relays, designed for high reliability and low drive current applications.
Relays are categorized into types such as BI, BI+, and UNI, with specific configurations and capabilities.
Key features include low drive current, high reliability, no EMI/RFI generation, and arc-free operation.
Relays are used in telecommunications, data communications, instrumentation, multiplexers, data acquisition, electronic switching, meters, medical equipment, security, and industrial controls.
The document provides specifications for AC power switches, solid-state relays, and gate driver ICs, designed for industrial environments.
These switches use dual power-SCR outputs, offering blocking voltages up to 800VP.
Lists various models with specifications such as blocking voltage, load current, and isolation voltage.
IXYS Integrated Circuits offer low-side gate drivers for MOSFETs and IGBTs, with peak drive currents up to 30A.
These drivers control two N-Channel MOSFETs or IGBTs, supporting high-side operation up to 600VDC.
Designed for fast switching applications, these drivers control three pairs of N-Channel MOSFETs or IGBTs.
The CPC1580 and CPC1590 devices are MOSFET gate drivers that do not require an external power supply.
Devices like FDA215 and FDA217 provide isolated photovoltaic outputs for use in discrete solid-state relay designs.
The CPC1596 is an optically isolated, load-biased gate driver designed for low duty cycle switching applications.
Features fast MOSFET turn-on by utilizing charge stored in an external capacitor.
- No load-side power supply required
- Drives external power MOSFET
- Low input LED current of 2.5mA
- 3750VRMS input-to-output isolation
Applicable in industrial controls, instrumentation, medical equipment isolation, electronic switching, I/O subsystems, and appliances.
IXYS IC Division's linear optocouplers feature an infrared LED coupled with two photodiodes, providing high input-to-output isolation.
Details a range of rectifier diodes optimized for low conduction losses, suitable for line frequency applications up to 400 Hz.
Specifications for various types of diodes, including soft recovery diodes, standard fast recovery diodes, extra fast recovery diodes, and high-power sonic fast recovery diodes.
Designed for applications requiring soft recovery characteristics, such as RCD snubbers and voltage clamping.
Available in capsule types, characterized by fast recovery times.
Designed to minimize reverse recovery current, suitable for modern switching applications.
Available from 3.3 kV to 6.5 kV with current ratings from 500 A to 4000 A.
- VRRM: Maximum repetitive reverse voltage.
- IFAV: Average forward current.
- IFSM: Maximum surge current.
- Reverse Recovery Time (trr): Time taken for the diode to switch from conducting to blocking state.
- Thermal Resistance (RthJK): Thermal resistance from junction to case.
Used in high-power applications, including snubberless IGBT and IGCT applications, traction, medium voltage drives, induction heating, and pulsed power applications.
Specifications for high-power devices, focusing on distributed gate thyristors.
Lists part numbers with electrical characteristics, including blocking voltages, average currents, and tq ratings.
Categorizes devices into different capsule types, each with unique specifications.
- VDRM/VRRM: Maximum repetitive peak off-state voltage and maximum repetitive peak reverse voltage.
- ITAV: Average on-state current.
- ITSM: Peak one-cycle surge (non-repetitive) on-state current.
- tq: Turn-off time.
- Qrr: Reverse recovery charge.
- VTO: Threshold voltage.
- rT: On-state slope resistance.
- RthJK: Thermal resistance from junction to case.
Ideal for high-power applications due to robust design and efficient performance characteristics.
Specifications for Press-pack IGBTs and their applications, highlighting advantages in power cycling performance, compatibility, and cooling options.
Lists IGBT models with specifications, including voltage ratings, current capacities, and thermal resistance.
Suitable for applications with repeated cyclic power demands, such as metals and traction drive systems.
Describes the C044BG400 IGBT Gate Driver, highlighting features such as low-power consumption and fiber-optic communication interface.
Outlines capabilities of the Power Electronic Stacks group, emphasizing experience in providing solutions from simple rectifiers to complex power systems.
Discusses design philosophy, focusing on collaboration with customers and advanced modeling techniques.
Provides a comprehensive overview of high-power devices and their applications, emphasizing technical specifications, compatibility, and support.
Specifications and descriptions of discrete devices and modular solutions offered by Littelfuse, Inc.
Lists supporting components for power semiconductors, including heatsinks, coolers, mounting clamps, ultra-rapid semiconductor protection fuses, capacitors, snubbers, rectification units, specialist DC links, and gate drive units.
Details specifications of single-phase, three-phase, and six-phase diode bridges, as well as thyristor bridges.
Simplified stacks using WESPACK phase control thyristors, available in configurations such as AC voltage regulators and single/three-phase bridges.
Offers a range of accessories to support high-power semiconductor devices, including PTFE tubes, electrode insulator capsules, co-axial cables, and standard bar clamps.
All products adhere to ISO 9000 standards and comply with the European Union Directive 2002/95/EC.
Specifications and dimensions for various electronic components, focusing on different package types such as TO-3P, ISOPLUS, and SOT-227.
- TO-3P Package: Weight is 5.5g. Dimensions include parameters like A, A1, A2, b, b2, c, D, D1, D2, E, E1, e, L, L1, Q, R, and W.
- ISOPLUS247TM: Weight is 4.5g. Similar dimensional details are provided.
- ISOPLUS264TM: Weight is 7.5g. Dimensions for A, A1, A2, b, b2, c, D, D1, D2, E, E1, e, L, L1, Q, R, and W.
- SOT-227: Weight is 29g. Includes dimensions for A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q, R, and S.
- All metal areas are tin plated or matte pure tin plated, ensuring corrosion resistance and solderability.
- Plastic areas are isolated to withstand 2500 V AC from leads.
- Ensure accurate measurement adherence to specified dimensions for optimal component performance.
- Consider weight specifications when designing circuits to ensure compatibility and stability.
- Each component type is accompanied by a detailed table listing dimensions in both metric and imperial units.
- Standardized dimensions ensure compatibility across different manufacturing and assembly processes.
Lists various product codes with corresponding page numbers, indicating a catalog or index of products.
Littelfuse emphasizes its commitment to high standards in performance, reliability, safety, and regulatory compliance.
Outlines Littelfuse's extensive testing capabilities, categorized into Environmental, Electrical, and Physical-Mechanical Characteristics.
Provides local resources for a global market, ensuring products meet specific application needs.
Users are advised to independently evaluate the suitability of products for their applications.
Lists various Littelfuse locations worldwide, including cities in the USA, Canada, Mexico, Brazil, Europe, and Asia.
Catalog excerpts
Power Semiconductor & IC 2023 –2024 Selection Guide A comprehensive portfolio of power semiconductor and integrated circuit technologies in industry standard and innovative packages
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Table of Contents About this guide This selection guide offers a comprehensive look at the breadth and depth of the IXYS: A Littelfuse Technology power semiconductor and control IC portfolio. From milliwatt to gigawatt system solutions and everything in between, we’ve got the devices that meet your needs. Diode Modules – Single and Dual100 Thyristor / Diode Modules 103 Thyristor Modules – Single and Dual 106 Bridges with Fast Diodes111 Three Phase, with Brake Unit 117 Buck / Boost / Phase Leg38 Fast Recovery Diodes 143 Soft Recovery Diodes 145 Very High Voltage
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Nomenclature Capsule Devices - Excluding IGBT’s Press-Pack IGBT Capsule Devices Device Type Special Designator Device Type Build description for multiple square die 0240 Device pulse current rating Reverse conducting Asymmetric Reverse conducting (IGBT to diode ratio of 2:1) Electrode diameter Voltage grade - VRRM / 100 Rectifier diode Fast/soft recovery diode Extra fast diode HP Sonic-FRDTM Phase control thyristor Distributed gate thyristor Fast turn-off thyristor Medium voltage thyristor Asymmetric thyristor Symmetrical gate turn-off thyristor Fast symmetrical gate turn-off thyristor Asymmetric...
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Common anode/emitter/source 1 Phase Rectifier Bridge Half-controlled (high side) Common cathode/collector/drain Single Part + Multiple cathode pins + 1 Phase rectifier bridge Single Part High-side thyristor low-side diode Buck Chopper With series connected dice Boost/Brake Chopper + Freewheeling diode + Vce,sat-Diode Nomenclature • Valid only for products from IXYS/Littelfuse Lampertheim. • Usage for new technologies, chips, packages, and/or groups. • Newer data sheets contain description of part number. Brake Chopper (Rating IGBT >> Rating Diode) 3 Phase Rectifier Bridge + 3 Phase rectifier...
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Featured Packages PressFit-Pin for E2, E3, and SimBus F Module Packages IXYS presents new PressFit-Pin technology for E2 and E3 module packages. Modules equipped with these pins can be connected to the PCB without soldering. For the pressing process, either hand tools or pressing machines can be used. The benefits of the assembly are as follows: High Voltage TO-252 (D-Pak) Package Creepage (min): A Close Look at the PressFit-Pin Technology pin/pin: 3.6 mm pin/Cu back-side: 2.5 mm • Simplified process • Reduced mounting time • No risk of bad solder contacts • Reduced aging of pin contact Part...
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Featured Packages High Voltage TO-263 (D2-Pak) Package High Voltage TO-268 (D3-Pak) Package pin/pin: 4.2 mm pin/Cu back-side: 4.7 mm Part Number pin/pin: 9.4 mm pin/Cu back-side: 5.8 mm Part Number Standard Thyristor Fast Thyristor Part Number High Efficiency Config. IGBT & BiMOS™ Part Number XPTTM IGBT Fast XPT™ IGBT Copack Single High Voltage XPT™ IGBT High Voltage BiMOS™ High Voltage BiMOS™ VCES / VDSS X-Class HiPerFET™ Depletion Mode MOSFET High Voltage MOSFET Single Single High Voltage MOSFET High Voltage MOSFET Single Single High Voltage XPT™ IGBT High Voltage XPT™ IGBT High Voltage BiMOS™...
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Featured Packages High Voltage TO-268 (D3-Pak) Package Creepage (min): High Voltage TO-247HV and PLUS247HV Packages pin/pin: 9.4 mm pin/Cu back-side: 5.8 mm Part Number Part Number FRED HiPerFRED HiPerFRED Standard Diode Standard Diode High Efficiency Standard Thyristor High Voltage Thyristor Phase leg Triac Single Single Single Single Single MOSFET Part Number Schottky Diode HiPerFRED Common Cathode Phase Leg Common Cathode High Efficiency Standard Single Single High Efficiency
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Featured Packages ISO247 Package Isolated Discrete Packages Part Number XPT™ IGBT Fast Trench IGBT High Voltage MOSFET Part Number • Thermal resistance from junction to case only slightly higher than A larger version of this packaging technology is the ISOPLUSi4PACTM, which has up to five terminal pins, making it possible to create full diode bridges, phase-leg transistor configurations, buck and boost converters, and much more within one isolated discrete package. for non-isolated versions • Increased power and temperature cycling capability • DCB can be patterned like printed circuit boards...
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Featured Packages Features and Benefits • • • • • • • • Electrical isolation of 2500 V Low thermal resistance Increased power & temperature cycling Saves PCB mounting area Replaces multiple discretes Reduces parasitic inductance & capacitance Reduces EMI Improved heat spreading Part Number Circuit Diagram/Technology SMPD-B SMPD-B Fast Rectifier DPG 60B600LB HiPerFRED DCG 20B650LB SiC DHG 40B1200LB Sonic Trench2 Trench2 Trench2 HiPerFET™ Trench HiPerFET™ Trench2 HiPerFET™ Trench HiPerFET™ Trench HiPerFET™ Trench HiPerFET™ Polar3 HiPerFET™ Polar3 HiPerFET™ Q3 HiPerFET™ MOSFET1 CP & FRED X2 Class...
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Featured Packages IGBTs Circuit Diagram/Technology Part Number XPT™ XPT™ & Sonic XPT™ & Sonic XPT™ IGBT Gen4™ XPT™ fast & Sonic XPT™ fast & Sonic Gen3 IGBT & Sonic SMPD-B SMPD-B SMPD-B SMPD-X SMPD-X SMPD-X XPT™ & Sonic XPT™ & Sonic XPT™ & Sonic XPT™ & Sonic XPT™ & Sonic XPT™ & Sonic Trench IGBT & Sonic & NTC Trench IGBT & Sonic Circuit Diagram/Technology Schottky Schottky Schottky SiC SMPD-B SMPD-B SMPD-B HiPerFRED SiC Rectifier Rectifier Rectifier Sonic Sonic Rectifier SMPD-B SMPD-B SMPD-B Part Number SMPD-Y Part Number Circuit Diagram/Technology MOS-Gated Thyristors Part Number Circuit Diagram...
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Featured Packages Potential Application Block Diagram Exmaple (for i4-PACTM) 3, 4, and 5 leaded packages for various circuit topologies and DCB base plate MTI...W..GC MTC...W..GC Surface Mount Device MTI...WX...GD MTC...X...TGD GMM... Surface Mount Device Replaces multiple discretes Reduces parasitic inductance and capacitance Reduces EMI Less weight Power Factor Correction Solutions offered by IXYS System implementation options Rectifier Forward Converter FBO 16-12N (line rectifier) FBO 40-12N (line rectifier) FBE 22-06N1 (HiPerFRED) Part Number Part Number Electrical isolation of 2500 V Low...
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- Connector
- Data connector
- Temperature probe
- Transformer
- Dry transformer
- Surge protector
- Resistance temperature sensor
- Proximity switch
- Level probe
- Liquid level sensor
- Switching relay
- Cylindrical proximity sensor
- Circuit breaker
- Class II surge protector
- Panel panel meter
- Isolator switch
- Current transformer
- Protection relay
- Position transducer
- IP67 proximity sensor