Catalogs >
Linseis Thermal Analysis >
TF-LFA LaserFlash Apparatus for thin films (Thermal Conductivity/Diffusivity)

TF-LFA LaserFlash Apparatus for thin films (Thermal Conductivity/Diffusivity)
8Pages

Catalog excerpts

TF-LFA LaserFlash Apparatus for thin films (Thermal Conductivity/Diffusivity) - 1

THIN FILM LASERFLASH

TF-LFA LaserFlash Apparatus for thin films (Thermal Conductivity/Diffusivity) - 2

Information of the thermo physical properties of materials and heat transfer optimization of final products is becoming more and more vital for industrial applications. Over the past few decades, the flash method has developed into the most commonly used technique for the measurement of the thermal diffusivity and thermal conductivity of various kinds of solids, powders and liquids. Thermophysical properties from thin-films are becoming more and more important in industries such as, phase-change optical disk media, thermoelectric materials, light emitting diodes (LEDs), phase change...

Open the catalog to page 2

TF-LFA LaserFlash Apparatus for thin films (Thermal Conductivity/Diffusivity) - 3

Laserflash technique Description of the standard Laserflash technique A sample is positioned on a sample holder, located in a furnace. The furnace is then held at a predetermined temperature. At this temperature the sample surface is then irradiated with a programmed energy pulse (laser or xenon flash). This energy pulse results in a homogeneous temperature rise at the sample surface. The resulting temperature rise of the rear surface of the sample is measured by a IR detector and thermal diffusivity values are computed from the temperature rise versus time data. The resulting measuring...

Open the catalog to page 3

TF-LFA LaserFlash Apparatus for thin films (Thermal Conductivity/Diffusivity) - 4

Description of the Thin-Film-Laserflash technique High Speed Laserflash Method Time Domain Thermoreflectance Method Rear heating Front detection (RF) Front heating Front detection (FF) As thermal properties of thin layers and films differ considerably from the properties of the corresponding bulk material a technique overco- Descrition of the Time-Domain Thermoreflectance technique ming the limitations of the classical Laserflash method is required: the This is a method by which the thermal properties (thermal conductivity, “High Speed Laserflash Method”. thermal diffusivity) of thin layers...

Open the catalog to page 4

TF-LFA LaserFlash Apparatus for thin films (Thermal Conductivity/Diffusivity) - 5

All thermo analytical devices of LINSEIS are PC controlled, the individual software modules exclusively run under Microsoft ® Windows® operating systems. The complete software consists of 3 modules: temperature control, data acquisition and data evaluation. The Linseis 32 – bit software encounters all essential features for measurement preparation, execution and evaluation, just like with other thermo analytical experiments. Due to our specialists and application experts LINSEIS was able to develop this easy understandable and highly practical software. General Software • Fully compatible...

Open the catalog to page 5

TF-LFA LaserFlash Apparatus for thin films (Thermal Conductivity/Diffusivity) - 6

Comperison of measured and calculated curves (2-layer model) (|||LjA|l]LlLi»JI. lllilal Mo thin layer on Si02; Temperature-time-curve of samples of different thickness

Open the catalog to page 6

TF-LFA LaserFlash Apparatus for thin films (Thermal Conductivity/Diffusivity) - 7

Temperature-time-curve of ZnO-samples of different thickness 1.0 271 nm 209 nm 145 nm 83 nm Relative temperature rise Thermal contact resistance [x10-6m2K/W] Measured thermal conductvity and thermal contact resistance of ZnO thin films Thickness d2 [nm]

Open the catalog to page 7

TF-LFA LaserFlash Apparatus for thin films (Thermal Conductivity/Diffusivity) - 8

Thin-Film-LFA Specifications Sample dimensions Round with a diameter of 10 mm to 20 mm Thin film samples Temperature range Heating and cooling rates inert, oxidizing or reducing Diffusivity Measuring range Nd:YAG Laser, maximum Impuls surrent: 90mJ/Impuls (software controled), Pulswidth: 8 ns Si-PIN-Photodiode, active diameter: 0,8 mm, bandwidth DC … 400MHz, risetime: 1ns quadrant diode, active diameter: 1,1mm, bandwidth DC … 100MHz, risetime: 3,5ns LINSEIS GmbH Vielitzerstr. 43 95100 Selb Germany Tel.: (+49) 9287–880 - 0 Fax: (+49) 9287–70488 E-mail: info@linseis.de LINSEIS Inc. 109 North...

Open the catalog to page 8