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OPA8510PPS

OPA8510PPS
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Mass Product φ100 μm　IR Pin-Point LED Chip　OPA8510PPS 1. Product Name φ100 μm　IR Pin-Point LED Chip　OPA8510PPS 2. Absolute Maximum Ratings Parameter Symbol Power Dissipation PD Forward Current IF Reverse Voltage VR Operating Temperature Topr Storage Temperature Tstg 3. Electro-Optical Characteristics Ta=25℃ Parameter Symbol Condition Min. Typ. Max. Unit Forward Voltage VF IF=20mA 1.5 2.0 V Reverse Current IR VR=3V 1.0 mA Radiated Power※ Po IF=20mA 0.85 1.10 mW Peak Wavelength λp IF=20mA 850 nm ※　LED chip is mounted on TO-18 stem without resin coated. Radiated Power is all light quantity that measured in integrating sphere owned by us. 4. Dimension （Unit：μm） Material Emitting Surface Surface Electrode Back Electrode Thickness AlGaAs/GaAs sub. P Side Au Au Alloy 280±15 μm The contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would　you　please　refer to the latest specifications. Issued : 2020/10/12 ver5 Design section : Compou

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Mass Product φ100 μm　IR Pin-Point LED Chip　OPA8510PPS Emission Spectrum Forward Voltage vs. Forward Current 100 Forward Current vs. Radiated Power Ambient Temperature vs. Forward Voltage 2.0 The contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would　you　please　refer to the latest specifications. Issued : 2020/10/12 ver5 Design section : Compound Device Design QMS-R-D5000 Ambient Temperature vs. Radiated Power

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