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OPA8508PPSA
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Catalog excerpts

OPA8508PPSA - 1

Mass Product φ80 μm IR Pin-Point LED Chip OPA8508PPSA 1. Product Name φ80 μm IR Pin-Point LED Chip OPA8508PPSA 2. Absolute Maximum Ratings Parameter Symbol Power Dissipation PD Forward Current IF Reverse Voltage VR Operating Temperature Topr Storage Temperature Tstg 3. Electro-Optical Characteristics Ta=25℃ Parameter Symbol Condition Min. Typ. Max. Unit Forward Voltage VF IF=20mA 1.7 2.2 V Reverse Current IR VR=3V 1.0 mA Radiated Power※ Po IF=20mA 0.80 1.10 mW Peak Wavelength λp IF=20mA 850 nm ※ LED chip is mounted on TO-18 stem without resin coated. Radiated Power is all light quantity that measured in integrating sphere owned by us. 4. Dimension (Unit:μm) Material Emitting Surface Surface Electrode Back Electrode Thickness AlGaAs/GaAs sub. P Side Au Au Alloy 250±15 μm The contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications. Issued : 2020/10/9 ver3 Design section : Compou

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OPA8508PPSA - 2

Mass Product φ80 μm IR Pin-Point LED Chip OPA8508PPSA Emission Spectrum Forward Voltage vs. Forward Current 80 Forward Current vs. Radiated Power Ambient Temperature vs. Forward Voltage 2.0 The contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications. Issued : 2020/10/9 ver3 Design section : Compound Device Design QMS-R-D5000 Ambient Temperature vs. Radiated Power

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