Product Fact Sheet High productivity patterned wafer inspection system detects a wide variety of critical defects that affect the yield and reliability of wide bandgap (WBG) semiconductors, such as SiC and GaN The 8930 provides high throughput, inline defect detection and binning, helping power semiconductor and RF device makers:  Accurately identify and quickly resolve production process issues that can affect final chip yield and quality  Implement high sampling strategies by monitoring up to 100% of die on all wafers at critical process steps to remove die that may fail at package-level testing or in field use to automotive standards  Produce power application products on an extendible, cost-effective platform that provides the inspection sensitivity and AI technology needed to isolate critical defects and the throughput to support high sampling  Multi-mode LED scanning capability with high NA optics  High throughput operating modes  Transparent wafer handling; patterned and unpatterned wafer inspection  DefectWise® DL-based defect discovery and binning technology  DesignWise® and FlexPoint™ precise area inspection technologies  Advanced defect detection and noise suppression algorithms  Epi substrate quality control of SiC/GaN substrate defectivity  Inline process and tool monitoring with high sampling for reduced excursion risk  SiC critical detection of threading dislocations and reliability defects  Outgoing quality control of final patterned wafers Power Semiconductor and RF Devices Automotive and EV/HEV Clean Energy PLATFORM: MORE INFORMATION: WAFER SIZES: