Product Fact Sheet Broadband plasma optical patterned wafer inspection system discovers defects that affect the yield and reliability of memory chips The 2950 EP provides high sensitivity discovery and binning of critical defects across a broad range of process layers, material types and process stacks. The 2950 EP helps memory manufacturers:  Accelerate R&D and ramp cycle time through characterization and optimization of new processes, design nodes and devices  Implement defect reduction strategies to meet chip quality requirements  Accelerate yield learning by providing accurate, actionable data on yield-critical defects  Detect and characterize defect issues at optimal cost of ownership  Tunable DUV, UV, visible broadband illumination source  Selectable optical apertures  Low-noise sensor  Super•Pixel™ inspection test mode for high throughput at sensitivity  Advanced defect detection algorithms, including MCAT  iDO™ 3.0 with advanced machine learning techniques for defect binning and nuisance suppression  Novel algorithms for capture of critical defects of interest at the edges of memory cells and for binning of defects at critical memory process steps  Advanced Auto Focus capabilities for high sensitivity on tall 3D NAND memory stack applications  Warped wafer chuck (billable option)  Defect discovery for R&D and ramp  Characterization and debug of defect issues  Inline monitoring of critical layers requiring high sensitivity  Process window discovery and qualification Chip manufacturing advanced design node memory devices, including 3D NAND and MORE INFORMATION: