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X-Class HiPerFETTM Power MOSFET

X-Class HiPerFETTM Power MOSFET

X-Class HiPerFETTM Power MOSFET

Product catalog summary
Product Overview: The IXFH40N80XA is a high-voltage, high-power density N-Channel Enhancement Mode Power MOSFET designed by IXYS Corporation. It features a VDSS of 800V, ID25 of 40A, and RDS(on) ≤ 145mΩ. The device is avalanche rated and comes in an international standard package with low RDS(ON) and QG, offering low package inductance.
Features and Advantages: The MOSFET is designed for high power density and easy mounting, providing space savings. It is suitable for applications such as switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, robotics, and servo controls.
Specifications: The device operates within a temperature range of -55°C to +150°C, with a maximum lead temperature for soldering of 300°C. It supports a continuous gate-source voltage (VGSS) of ±30V and a transient VGSM of ±40V. The maximum drain current (ID25) is 40A at 25°C, with a pulse width limited IDM of 80A.
Electrical Characteristics: At TJ = 25°C, the breakdown voltage (BVDSS) is 800V, and the gate threshold voltage (VGS(th)) ranges from 3.5V to 5.5V. The device exhibits a gate input resistance (RGi) of 0.7Ω and a thermal resistance junction-to-case (RthJC) of 0.145°C/W.
Performance Graphs: The document includes various graphs illustrating output characteristics, RDS(on) normalization, breakdown and threshold voltages, input admittance, transconductance, forward voltage drop, gate charge, capacitance, and thermal impedance. These graphs provide insights into the device's performance under different conditions.
Disclaimer: IXYS reserves the right to change limits, test conditions, and dimensions without notice. Users should independently evaluate the suitability of the product for their applications.
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Catalog excerpts

X-Class HiPerFETTM Power MOSFET-1

X-Class HiPerFET™ IXFH40N80XA Power MOSFET AEC Q101 Qualified N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Advance Technical Information Test Conditions_Maximum Ratings TC= 25°C, Pulse Width Limited by TJM 80 A Maximum Lead Temperature for Soldering 300 °C Mounting Torque 1.13 / 10 Nm/lb.in Symbol Test Conditions Characteristic Values • International Standard Package • High Voltage Package Low RDS(ON) and Qg • Avalanche Rated • Low Package Inductance Advantages • High Power Density • Easy to Mount • Space Savings Applications • Switch-Mode and Resonant-Mode Power Supplies • DC-DC Converters • PFC Circuits • AC and DC Motor Drives • Robotics and Servo Controls © 2018 IXYS CORPORATION, All Rights Reserved

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X-Class HiPerFETTM Power MOSFET-2

(TJ = 25°C, Unless Otherwise Specified) Min. Source-Drain Diode Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Note 1. Pulse test, t < 300ps, duty cycle, d < 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right...

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X-Class HiPerFETTM Power MOSFET-3

IXFH40N80XA Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 4. RDS(on) Normalized to ID = 20A Value vs. Junction Temperature Fig. 5. RDS(on) Normalized to ID = 20A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature BVDSS / VGS(th) - Normalized RDS(on) - Normalized © 2018 IXYS CORPORATION, All Rights Reserved

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X-Class HiPerFETTM Power MOSFET-4

Fig. 7. Maximum Drain Current vs. Case Temperature 45 50 Fig. 10. Forward Voltage Drop of Intrinsic Diode Capacitance - PicoFarads IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

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X-Class HiPerFETTM Power MOSFET-5

IXFH40N80XA Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 100 TC = 25 C Fig. 15. Maximum Transient Thermal Impedance Single Pulse Fig. 15. Maximum Transient Thermal Impedance aaaaa Pulse Width - Second © 2018 IXYS CORPORATION, All Rights Reserved

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X-Class HiPerFETTM Power MOSFET-6

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

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X-Class HiPerFETTM Power MOSFET-7

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

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