Three Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED)
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© 2002 IXYS All rights reserved 1 - 2 IXYS reserves the right to change limits, test conditions and dimensions. VUE 130-06NO7 241 B3 Three Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) in ECO-PAC 2 IdAV = 130 A VRRM = 600 V trr = 35 ns VRSM VRRM Typ V V 600 600 VUE 130-06NO7 Symbol Conditions Maximum Ratings IdAV ‡@ TC = 85°C, module 130 A IdAVM 130 A IFSM TVJ = 45°C t = 10 ms (50 Hz), sine 600 A VR = 0 t = 8.3 ms (60 Hz), sine 640 A TVJ = TVJM t = 10 ms (50 Hz), sine 520 A VR = 0 t = 8.3 ms (60 Hz), sine 555 A I2t TVJ = 45°C t = 10 ms (50 Hz), sine 1800 A2s VR = 0 t = 8.3 ms (60 Hz), sine 1720 A2s TVJ = TVJM t = 10 ms (50 Hz), sine 1350 A2s VR = 0 t = 8.3 ms (60 Hz), sine 1295 A2s TVJ -40...+150 °C TVJM 150 °C Tstg -40...+125 °C VISOL 50/60 Hz, RMS t = 1 min 3000 V~ IISOL 1 mA t = 1 s 3600 V~ Md Mounting torque (M4) 1.5-2/14-18 Nm/lb.in. Weight typ. 24 g Features • Package with DCB ceramic base plate in low profile • Isolation voltage 3000 V~ • Planar passivated chips • Low forward voltage drop • Leads suitable for PC board soldering Applications • Supplies for DC power equipment • Input and output rectifiers for high frequency • Battery DC power supplies • Field supply for DC motors Advantages • Space and weight savings • Improved temperature and power cycling capability • Small and light weight • Low noise switching Data according to IEC 60747 refer to a single diode unless otherwise stated ‡@ for resistive load at bridge output. Symbol Conditions Characteristic Values Dimensions in mm (1 mm = 0.0394") typ. max. IR VR = VRRM TVJ = 25°C 0.1 mA VR = VRRM TVJ = TVJM 2.5 mA VF IF = 60 A TVJ = 25°C 2.04 V VT0 for power-loss calculations only 1.09 V rT 4.3 mÙ RthJC per diode; DC current 0.8 K/W RthCH per diode, DC current, typ. 0.2 K/W IRM IF = 130 A, -diF/dt = 100 A/ìs 6.8 A VR = 100 V, TVJ = 100°C trr IF = 1 A; -di/dt = 300 A/ìs; VR = 30 V, TVJ = 25°C 35 ns a Max. allowable acceleration 50 m/s2 dS creeping distance on surface (pin to heatsisnk) 11.2 mm dA strike distance in air (pin to heatsisnk) 9.7 mm Preliminary data sheet PS16 EG 1 ~ A 1 ~ L 9 ~ K10 Pin arangement see outlines

© 2002 IXYS All rights reserved 2 - 2 IXYS reserves the right to change limits, test conditions and dimensions. VUE 130-06NO7 241 B3 Fig. 3 Peak reverse current IRM versus -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt Fig. 1 Forward current IF versus VF Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt 0 200 400 600 800 1000 80 90 100 110 120 130 140 0.00001 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 Kf TVJ C -diF/dt t s K/W 0 200 400 600 800 1000 0 5...