© 2008 IXYS All rights reserved - 2 20080602a FBS 10-06SC IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information Silicon Carbide Schottky Rectifier Bridge in ISOPLUS i4-PAC™ Features • Silicon Carbide Schottky Diodes - no reverse recovery at turn off - only charge of junction capacity - soft turn off waveform - no forward recovery at turn on - switching behaviour independent of temperature - low leakage current • ISOPLUS i4-PAC™ package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - high reliability - industry standard outline Applications • output rectifiers of high end switch mode power supplies • other high frequency rectifiers Rectifier Bridge Symbol Conditions Maximum Ratings VRRM 600 V IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode) TC = 90°C TC = 25°C; t = 10 ms; sine 50 Hz 3 6.6 12 A A A Ptot TC = 25°C (per diode) 19 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VF IF = 4 A TVJ = 25°C TVJ = 125°C 1.7 1.9 2.0 V V IR VR = VRRM TVJ = 25°C TVJ = 125°C 0.04 0.2 mA mA CJ VR = 400 V TVJ = 125°C 9 pF RthJC RthJS (per diode) 11.5 8 K/W K/W VRRM = 600 V IdAVM = 6.6 A Cjunction = 9 pF 1 45 2 1 5

© 2008 IXYS All rights reserved - 2 20080602a FBS 10-06SC IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information Dimensions in mm (1 mm = 0.0394“) Die konvexe Form des Substrates ist typ. < 0,05 mm über der Kunststoffoberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.05 mm over plastic surface level of device bottom side Component Symbol Conditions Maximum Ratings TVJ Tstg operating -40...+175 -40...+125 °C °C VISOL IISOL < 1 mA; 50/60 Hz 2500 V~ FC mounting force with clip 20 - 120 N Symbol Conditions Characteristic Values...