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N-CHANNEL: STANDARD POWER MOSFETS XTQ110N055P

N-CHANNEL: STANDARD POWER MOSFETS XTQ110N055P
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N-CHANNEL: STANDARD POWER MOSFETS XTQ110N055P - 1

PolarHTTM Power MOSFET IXTA 110N055P IXTP 110N055P IXTQ 110N055P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Test Conditions Maximum Ratings VDSS VDGR TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) Easy to mount Space savings High power density

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N-CHANNEL: STANDARD POWER MOSFETS XTQ110N055P - 2

Test Conditions Characteristic Values (Tj = 25° C, unless otherwise specified) Source-Drain Diode Characteristic Values (T = 25° C, unless otherwise specified) IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025

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N-CHANNEL: STANDARD POWER MOSFETS XTQ110N055P - 3

IXTA 110N055P IXTP 110N055P IXTQ 110N055P Fig. 1. Output Characte ris tics @ 25ºC Fig. 2. Exte nde d Output Characte r is tics @ 25ºC 220 V D S - V olts Fig. 3. Output Characte ris tics @ 150ºC Fig. 4. RDS(on ) Norm alize d to 0.5 ID25 V alue vs . Junction Te m pe ratur e Fig. 5. RDS(on) Norm alize d to 0.5 ID25 V alue vs . Dr ain Curr e nt Fig. 6. Drain Curre nt vs . Cas e Te m pe rature 90 External Lead C urrent Lim it © 2006 IXYS All rights reserved

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N-CHANNEL: STANDARD POWER MOSFETS XTQ110N055P - 4

IXTA 110N055P IXTP 110N055P IXTQ 110N055P Fig. 8. Trans conductance V G S - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage Fig. 12. For w ard-Bias Safe Ope rating Are a Capacitance - picoFarads IXYS reserves the right to change limits, test conditions, and dimensions.

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