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IXYS RF Switch Mode MOSFET

IXYS RF Switch Mode MOSFET

IXYS RF Switch Mode MOSFET

Product catalog summary
Introduction
The document provides an overview of the IXYS RF Switch Mode MOSFET family, which is designed for fast switching applications such as laser drivers, induction heating, and switch mode power supplies. The MOSFETs are based on HiPerRFTM technology, featuring a patented double metal approach for improved performance.

Z-MOSTM Ultra Low Capacitance RF MOSFET Portfolio
This section introduces the new Z-MOSTM process, which offers ultra-low capacitance and complements the existing DE SERIES portfolio. Devices with voltage ratings of 600V, 800V, 1000V, and 1200V will be available soon. Specifications for these devices are subject to change, with samples expected by late April 2003.

Specifications
The document lists detailed specifications for various MOSFET models, categorized by their breakdown voltage (BVDSS) ratings of 200V, 500V, and 1000V. Key parameters include:
  • BVDSS: Breakdown voltage
  • ID: Continuous drain current
  • IDM: Pulsed drain current
  • gfs: Forward transconductance
  • RDS(ON): On-resistance
  • TR: Rise time
  • CISS, COSS, CRSS: Input, output, and reverse transfer capacitances
  • PD: Power dissipation
  • Package type

Package Types
The MOSFETs are available in various package types, including TO-247, ISOPLUS247, DE150, DE275, DE375, DE475, and DE275X2, with some featuring backside isolation.

Conclusion
The IXYS RF Switch Mode MOSFET family offers a range of devices suitable for high-frequency and high-voltage applications, with the new Z-MOSTM process enhancing performance through reduced capacitance.
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Catalog excerpts

IXYS RF Switch Mode MOSFET-1

January 2003 SWITCH MODE POWER SUPPLIES & RF GENERATORS 500KHz-82MHz POWER MOSFETS The IXYS RF Switch Mode MOSFET family is ideal for applications requiring fast switching including laser driver, induction heating, switch mode power supplies and other non-linear industrial applications. An extensive product offering is based on the HiPerRFTM MOSFET technology which utilizes a patented double metal approach. The high voltage breakdown ratings combined with low capacitances result in significantly improved impedances and reduced driver design complexity. In addition our new ultra low capacitance ZMOSTM process is now available. This new process will compliment, not replace, the existing DE SERIES portfolio. Z-MOSTM (NEW!) Ultra Low Capacitance RF MOSFET Portfolio * (600v,800v, 1000v and 1200v devices will be available soon). Part Number BVDSS ID (A) IDM (A) gfs (S) CISS CRSS COSS PD (W) Package IXZH12N50F2 500 11 72 5 945 25 354 180 TO-247 IXZR12N50F2 500 11 72 5 945 25 354 160 ISOPLUS247 I ZH12N50F2A 500 11 72 5 945 25 354 180 TO-247A H12N50F2B 500 11 72 5 945 25 354 180 TO-247B 212N50F2 500 11 72 5 945 25 354 267 DE275 I Z2212N50F2 500 11 x 2 72 x 2 5 945 x 2 25 x 2 354 x 2 534 DE275X2 Prerelease data, specifications for Z-MOS subject to change, samples available late April 2003

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