Catalog excerpts
Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS PACKAGE design philosophy can reduce transportation costs across the whole of the value chain,” commented Bradley Green, the President of European Sales and Business Development. “Modules of this size and power had previously had issues in high transportation cost and First products its associated are dual die carbon footprint or phase-leg both at the matopology using nufacturer and both anode further when side and cathoinstalled in our de side soldecustomers’ ring options to equipment. By make available providing a much dual thyristor, smaller module dual diode or at far less weight thyristor/diode but at improved combinations. reliability, power The modules have a rated current of 700A per leg, improved range and ruggedness, IXYS provides the surge rating and a maximum junction tempe- perfect solution to our cost and environment sensitive customers,” added Mr. Green. rature of 140°C. The new ComPack family represents a compact package with the highest power density. The ComPack design is a result from the implementation of the newest assembly methods in combination with the proprietary ‘power metallization chip’ technologies of IXYS. Advancement in the module design as well as the silicon die technology leads to a userfriendly product that fulfills the highest needs in reliability and functionality. “The ComPack module is an excellent example of how innovations in design can provide benefits to our customers. Previous designs of a phase leg bi-polar module and similar competitive offerings are only rated between 500A and 570A. However, the ComPack is rated at 700A and up to 2,200V per die but Internally IXYS’ Direct Copper Bonded (DCB) ceramic technology provides a high isolation voltage of 4800V which is in line with Underwriters Laboratory (UL) requirements. With the adapted copper base plate, the ComPack concept achieves very low thermal impedance and helps reduce the module weight yet, supports long-term reliability under highest power output operation. With this development, IXYS is allowing the designer to switch more power than historically available, thereby facilitating higher power densities, greater material efficiency and lower systems cost and lower weight in motor control, soft starter, UPS or input rectification applications. ITAMV VRRM MCMA 700 P 1600CA MCMA 700 PD 1600CB MDMA 700 P 1600CC Features • Optimized creepage & clearance distances • Clip-soldered die technology • Less weight • Optimized heatsink & DCB construction • 93mm x 65mm x 50mm (L x W x H) • M10 screw connections Applications • Motor control, softstarter • AC-Control • UPS • Input rectification • Supplies for DC power equipment • Field supply for DC motors Anode Gated Thyristor (AGT) Technology Platform The first product derived from this new technology platform is the CLB30I1200HB, a 30A / 1200V Single Thyristor in a TO-247 discrete package. The gate control of the CLB30I1200HB is connected to the Anode side of the silicon die instead of to the Cathode side, as done by a standard Thyristor. The combination of the Anode Gated Thyristor together with a standard Thyristor, e.g. the CLA30E1200HB, gives several interesting configurations. Thyristor Phase-leg configurations normally contain two separated gate driver potentials but, by replacing one Thyristor with the AGT, it will reduce to only one gate driver potential. This will save one complete gate driver circuit. Also an AC switch configuration be- nefits from the AGT, also here the switch can be operated with only one gate drive circuit. This shows great cost saving possibilities by reducing the gate drive component count. Therefore it will also have a positive impact on the Mean Time To Failure (MTTF) in the final application. Several applications are targeted by the Anode Gated Thyristor for example line rectifying, doft-starters, DC motor control, AC power / lighting and temperature control. Generally in all applications that use thyristors and / or TRIAC’s the Anode Gate Thyristor will benefit. The Anode Gated Thyristor platform has si- The CLB30I1200HB and CLA30E1200HB milar electrical specification as the standard discrete thyristors are available in production Thyristor and is not limited to the 1200V/30A quantities. ratings of the CLB30I1200HB. In the future various die sizes with higher and lower Current/Voltage ratings are planned to complete the AGT product portfolio. This new thyristor platform is made possible by IXYS’ known and AGT Standard proven thyristor technologies and in-house production methods. -1-
Open the catalog to page 1IXYS expands Product Portfolio of 1200 V High-Speed Rugged XPT™ IGBTs These new devices are designed to minimize switching losses in high-voltage, hardswitching applications. The high-speed switching capabilities (up to 50 kHz) of these IGBTs allow designers to use smaller and lighter components in their systems. For IXYS customers who need to lower turn-off losses and / or remove snubbers/ clamps from their designs, IGBTs with co-packed ultra-fast recovery diodes in Sonic-FRD™ or HiPerFRED™ Technology are available. Manufactured through the stateof-the-art IGBT process and the XPT™ design...
Open the catalog to page 2Embedded Security Solution The New ZGATE™ Embedded Security combines multiple technologies for safer, faster and better deployment of embedded communications applications. ZGATE™ Embedded Security incorporates Zilog’s eZ80F91 MCU and full-featured TCP/IP stack with a unique world-class embedded firewall to produce an entirely new technology that offers an additional layer of embedded protection for smarter, safer devices and products. ZGATE™ technology, reduces the incidence of security breaches in many types of products in defense, telecommunications, utilities, transportation, medical and...
Open the catalog to page 3All IXYS catalogs and technical brochures
-
Polar3TM Power MOSFETs
2 Pages
-
600V XPT IGBTs
2 Pages
-
1200V XPT? IGBTs
2 Pages
-
650V XPT? Trench IGBTs
2 Pages
-
4500V POWER MOSFETs
2 Pages
-
IXYS 2013
232 Pages
-
BODO'S POWER SYSTEMS®
4 Pages
Archived catalogs
-
MICROCONTROLLERS Z8F0223QB005EG
245 Pages
-
Selector guide
220 Pages
-
Breakover Diodes
8 Pages
-
NPT3 IGBT
4 Pages
-
IXYS RF Switch Mode MOSFET
2 Pages
-
HiPerFETTM Power MOSFET
4 Pages