HiPerFETTM Power MOSFET
4Pages

© 2005 IXYS All rights reserved 1 - 4 VKM 60-01P1 515 ID25 = 75 A VDSS = 100 V RDSon = 25 mÙ trr < 200 ns HiPerFETTM Power MOSFET H-Bridge Topology in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family MOSFETs Symbol Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MÙ 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 75 A IDM TC = 25°C, pulse width limited by TJM 300 A IAR TC = 25°C 75 A EAR TC = 25°C 30 mJ dv/dt IS IDM, di/dt 100 A/ìs, VDD VDSS, 5 V/ns TJ 150°C, RG = 2 Ù PD TC = 25°C 300 W Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 ìA 100 V VGS(th) VDS = VGS, ID = 4 mA 2.0 4 V IGSS VGS = ±20 VDC, VDS = 0 ±100 nA IDSS VDS = 0.8 • VDSS; TJ = 25°C 250 ìA VGS = 0 V; TJ = 125°C 1 mA RDS(on) VGS = 10 V, ID = 0.5 ID25 25 mÙ Pulse test, t < 300 ìs, duty cycle d < 2% gfs VDS = 10 V; ID = ID25, pulse test 25 30 S Ciss 4500 pF Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1600 pF Crss 800 pF td(on) 20 30 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 60 110 ns td(off) RG = 2 Ù, (External) 80 110 ns tf 60 90 ns Qg(on) 180 260 nC Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 36 70 nC Qgd 85 160 nC RthJC 0.5 K/W RthCK with heatsink compound (0.42 K/m.K; 50 ìm) 0.25 K/W Features • HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode • ECO-PAC 2 package - isolated back surface - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - solderable pins for PCB mounting Applications • drives and power supplies • battery or fuel cell powered • automotive, industrial vehicle etc. • secondary side of mains power supplies IXYS reserves the right to change limits, test conditions and dimensions. Pin arangement see outlines L 4 L 9 P 18 R 18 X 15 T 18 V 18 A1 E10 F10 K10 K 12 K 13 NTC L 6 X 18

© 2005 IXYS All rights reserved 2 - 4 VKM 60-01P1 515 Module Symbol Conditions Maximum Ratings TVJ -40...+150 °C Tstg -40...+125 °C VISOL IISOL 1 mA; 50/60 Hz; t = 1 s 3600 V~ Md mounting torque (M4) 1.5 - 2.0 Nm 14 - 18 lb.in. a Max. allowable acceleration 50 m/s2 Symbol Conditions Characteristic Values min. typ. max. dS Creepage distance on surface (Pin to heatsink) 11.2 mm dA Strike distance in air (Pin to heatsink) 11.2 mm Weight 24 g Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) Symbol Conditions min. typ. max. IS VGS = 0 V 75 A ISM Repetitive; 300 A...