High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
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Preliminary Technical Information High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings Vces Tc = 25°C to 150°C SSOA (RBSOA) P„ Vge = 15V, Tvj = 125°C, Rg = 20Q Clamped Inductive Load TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Force 50/60Hz, 1 Minute Features • Silicon Chip on Direct-Copper Bond (DCB) Substrate • Isolated Mounting Surface • 4000V~ Electrical Isolation • High Blocking Voltage • High Peak Current Capability • Low Saturation Voltage • Low Gate Drive Requirement • High Power Density Symbol Test Conditions Characteristic Values Applications • Switch-Mode and Resonant-Mode Power Supplies • Capacitor Discharge Circuits © 2012 IXYS CORPORATION, All Rights Reserved

Symbol Test Conditions Characteristic Values Notes: 1. Pulse test, t < 300|is, duty cycle, d < 2%. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions...

© 2012 IXYS CORPORATION, All Rights Reserved

Fig. 2. Extended Output Characteristics @ T J = 25ºC 240 Fig. 4. Dependence of VCE(sat) on Junction Temperature VCE(sat) - Normalized Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

MMIX4B12N300 Fig. 8. Forward Voltage Drop of Intrinsic Diode Capacitance - PicoFarads Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area © 2012 IXYS CORPORATION, All Rights Reserved Pulse Width - Seconds

MMIX4B12N300 Fig. 14. Resistive Turn-on Rise Time vs. Collector Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 600 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance Fig. 17. Resistive Turn-off Switching Times vs. Collector Current Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 700 IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

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