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High Speed GaAs Schottky Diodes

High Speed GaAs Schottky Diodes

High Speed GaAs Schottky Diodes

Product catalog summary
Overview: This document introduces a new line of High-Speed GaAs Schottky Diodes designed for RF and MHz switching applications. These diodes offer extremely fast reverse recovery times, typically less than 15 nanoseconds, and have a much lower forward voltage compared to Silicon Carbide diodes.
Advantages: The GaAs Schottky Diodes provide significant advantages including extremely fast recovery times, low junction capacitances, and inherently low forward voltages. These features make them ideal for high-frequency converters, resonant converters, and switch mode power supplies operating in the KHz-MHz range.
Specifications: The diodes are available in a low inductance, low profile, electrically isolated, surface mount DE-150 package. They offer improved reliability and power cycling performance due to the matched thermal coefficient of expansion between the aluminum nitride substrate and the GaAs diode.
Configurations: Each device contains three diodes with three configuration options: Triple Independent (TI), Triple Common Cathode (TC), and Triple Common Anode (TA). Example part numbers include GS150TI25104, GS150TC25110, and GS150TA25120, indicating different configurations and specifications such as voltage, current, capacitance, and power ratings.
Performance: The GaAs Schottky diodes outperform both Ultrafast and Silicon Carbide technologies in terms of recovery times. They are particularly advantageous when used with DE Series Switch Mode & RF Mosfets, as both products share the same package profiles, facilitating a convenient single plane to heat sink.
Key Specifications:
  • GS150T_25104: 250 V, 4 A, 9pF, 1.5V, 9 W, 16.3 C/W
  • GS150T_25110: 250 V, 10 A, 18pF, 1.5V, 15 W, 9.6 C/W
  • GS150T_25120: 250 V, 20 A, 36pF, 1.5V, 20 W, 7.2 C/W
  • GS150T_25150: 250 V, 50 A (other parameters TBD)
Conclusion: The GaAs Schottky Diodes are a superior choice for high-speed and high-frequency applications due to their fast recovery times and low forward voltage, offering enhanced performance and reliability in power supply and converter applications.
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Catalog excerpts

High Speed GaAs Schottky Diodes-1

January 2003 Extremely Fast Recovery for RF & MHz Switching Applications GaAs Schottky Diode s • Advantage Extremely Fast Reverse Recovery Times, Typically <15nS • Much lower forward Voltage than Silicon Carbide • Isolated, low inductance, surface mount, high power package GS150TI25110 GS150TC25110 GS150TA25110 GS150TI25150 GS150TC25150 GS150TA25150 GS150TI25104 GS150TC25104 GS150TA25104 GS150TI25120 GS150TC25120 GS150TA25120 *Three configuration options available: TI - Triple Independent, TC - Triple Common Cathode, TA - Triple Common Anode Example: GS150TI25104 - The Triple Independent version. Description This new line of High Speed GaAs Schottky Diodes provide extremely fast recovery times, outperforming both Ultrafast and Silicon Carbide technologies. The recovery times and low junction capacitances combined with their inherently low forward voltages make this new product family ideal for High Frequency Converters, Resonant Converters and Switch Mode Power Supplies operating from the KHz-MHz range. The GaAs devices are packaged in the low inductance, low profile, electrically isolated, surface mount DE-150 package. The matched thermal coefficient of expansion between the aluminum nitride substrate and the GaAs Diode result in improved reliability and power cycling performance. The GaAs Schottky products have an added advantage when used in conjunction with the DE Series Switch Mode & RF Mosfets. Both products utilize the same package profiles resulting in a convenient single plane to heat sink. Each device contains three diodes, with three different configuration options; Triple *GS150T_25104 250 V 4 A 9pF 1.5V 9 W 16.3 C/W *GS150T_25110 250 V 10 A 18pF 1.5V 15 W 9.6 C/W *GS150T_25120 250 V 20 A 36pF 1.5V 20 W 7.2 C/W *GS150T_25150 250 V 50 A TBD TBD TBD TBD

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High Speed GaAs Schottky Diodes-2

IXYS RF GaAs Silicon Carbide Silicon Shottky PIN REVERSE RECOVERY 5A forward Current, di/dt of 150 A/usec, Vf = 100V TRIPLE INDEPENDENT (TI) TRIPLE COMMON CATHODE (TC) TRIPLE COMMON ANODE (TA) A1 A2 A3 C1 C2 C3 A1 A2 A3 C1 C2 C3 A1 A2 A3 C1 C2 C3 PART NUMBER GUIDE EXAMPLE: GS150TI25104 GS 150 TI 251 04 GaAs SCHOTTKY DE150 PACKAGE TRIPLE INDEPENDENT CONFIGURATION 250V BREAK DOWN 04 AMP (ADDITIONAL DIGIT ADDED FOR > 99 AMPS)

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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.