Efficiency Through Technology Energy-Efficient High-Power IGBTs (From 600V to 4500V) IXYS Corporation (NASDAQ: IXYS) oers the broadest IGBTs product portfolios in the power semiconductor industry; designers can choose from the largest selection of devices – be they 600V, 650V, 1200V, or other higher voltage rated IGBTs.Through the combination of its eXtreme-light Punch-Through (XPT™) technology and advanced IGBT process, IXYS is able to achieve low energy losses and exceptional device ruggedness while still maintaining low on-state voltages. Extreme-Light Punch-Through (XPT™) Technology As illustrated in Figure 1, the XPT™ is IXYS’ proprietary thin-wafer technology behind most of the recently released IGBT product lines. These optimized IGBTs feature low thermal resistance, low total energy losses, high current densities, and a positive temperature coecient of the on-stage voltage. Figure 2 demonstrates an example of a superior switching performance of XPT™ devices across frequencies, compared to traditional Trench ones. emitter XPT™ Planar XPT™ Trench Figure 1: IXYS XPT™ IGBT technologies IXYS also possesses an advanced 4th generation Trench IGBT process. By merging its two technologies, XPT™ and Trench IGBT process, IXYS is able to come up with XPT™ Trench IGBTs. These highly ecient low on-state voltage IGBTs are exceptionally rugged and exhibit low turn-o energy losses, which can be seen in Figure 3. 80 Competition Trench Total IGBT losses [W] Switching frequency [kHz] Figure 2: Total energy loss vs. frequency VCE(sat)(V) Figure 3: Trade-o performance [Eo vs. VCE(sat)] XPT™ Technology Advantages Thin wafer technology Reduced thermal resistance Low energy losses Fast switching Low tail current High current densities Positive temperature coecient of VCE(sat)

600V XPT™ IGBTs Rugged.Efficient.Reliable. Developed using the IXYS XPT™ thin wafer technology and advanced 3rd generation (GenX3™) IGBT process, these devices feature excellent electrical characteristics which include low on-state voltages (VCE(sat)as low as 1.6V), low current fall times (t as low as 32ns), and low turn-o energy losses (Eo as low as 0.27mJ at TJ =25°C). As their on-state voltage has a positive temperature coecient, they can be used in parallel to meet high current specications. Furthermore, their low gate charges help minimize gate drive requirements and switching losses. Best-In-Class...

650V XPT™ Trench IGBTs Highly Efficient Low On-State Voltage IGBTs for Hard or Soft Switching Applications These new 650V XPT™ Trench IGBTs are designed to optimize the trade-o between “switching and conduction losses” and “on-state voltage.” The task is accomplished by using the IXYS eXtreme-light Punch Through (XPT™) technology and state-of-the-art 4th generation (GenX4™) Trench IGBT process. These devices consequently exhibit low turn-o energy losses [Eo] while maintaining low on-stage voltages [VCE(sat)]. Thanks to the underlying XPT™ thin-wafer technology, the IGBTs also feature reduced...

Optimized For High-Speed Hard-Switching Applications Manufactured through the state-of-the-art GenX3™ IGBT process and an eXtreme-light Punch-Through (XPT™) design platform, the 1200V IGBTs display such qualities as high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. The XPT™ thin wafer technology also helps reduce thermal resistance (RthJC) and on-stage voltage (VCE(sat)), resulting in higher current densities, reduced chip sizes, and improved packaging capabilities. Designers can operate these devices in parallel to satisfy...

SimBus F...flexible solutions for 2- and 3- level topologies New 17 mm Module Generation SimBus F represents one of the newest package developments of IXYS. This new generation of DCB-isolated copper base modules provide several new features. Combined with the benets of well-proven technologies SimBus F is an optimized semiconductor product for power conversion with focus on 2-level and 3-level inverter applications. The outline of this package type using the industrial standard height of 17 mm facilitating easy bus bar connections between the rectier and inverter stages. Direct Copper Bonded...

2500V and 4500V Press Pack IGBTs As a leading innovator in press-pack IGBT technology IXYS UK oers the widest product portfolio bar none. These highly robust devices have been established in the market for more than 10 years; however, IXYS UK continues to develop and improve on the products available. The current portfolio oers devices with 2.5kV and 4.5kV blocking voltages and current ratings from 160A to 2400A. A representative range of available devices is tabulated below, including both asymmetric and reverse blocking types. The advanced die technology is based on an enhanced planar cell...