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Breakover Diodes

Breakover Diodes

Product catalog summary

Breakover Diodes Overview
Breakover diodes are used in various applications such as transient voltage protection, high-voltage switches, crowbar circuits, lasers, and pulse generators. These components are crucial for managing voltage spikes and ensuring the stability of electronic systems.

Specifications
The document provides detailed specifications for breakover diodes, including:

Maximum junction temperature (TVJm) of 125°C.
Temperature coefficient of VBO (KT) at 2·10^-3 K^-1.
Energy per pulse coefficient (KP) at 700 K/Ws.
Thermal resistance (RthJA) under natural convection at 60 K/W and with air speed at 45 K/W.
Standard VBO values ranging from 600V to 4200V, with specific models like IXBOD 1-06 to IXBOD 1-42R(D).

Performance Characteristics
Key performance metrics include:

On-state voltage (VT) at 1.7 V for TVJ = 125°C.
Holding current (IH) and breakover current (IBO) at 30 mA and 15 mA respectively at TVJ = 25°C.
Critical rate of rise of off-state voltage (dv/dt)C and current (di/dt)C with specific values depending on VBO range.

Thermal and Energy Considerations
The document includes diagrams illustrating transient thermal resistance and energy per pulse for different current waveforms. These are critical for understanding the thermal management and energy handling capabilities of the diodes.

Application Notes
Breakover diodes are used to protect thyristors against overvoltages. The document provides a calculation example for determining maximum junction temperature under specific conditions, emphasizing the importance of thermal management.

Protection Circuit Example
An example circuit is provided for emergency triggering, which includes components like fast recovery diodes, Zener diodes, and snubber networks to protect against parasitic triggering and manage reverse voltages.

Important Notices
The document notes that a single IXBOD element has a maximum reverse blocking voltage of 10V, and for higher reverse voltages, a fast recovery diode must be used in series.

Catalog excerpts

© 2000 IXYS All rights reserved H - 1 Breakover Diodes Applications Transient voltage protection High-voltage switches Crowbar Lasers Pulse generators i V VH VBO IH IBO Application Note H - 6 Remark: For special selection of more than 2 pieces IXBOD 1-... for every break down voltage of VBO > 2000 V please contact us.

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H - 2 © 2000 IXYS All rights reserved Symbol Conditions Ratings ID TVJ = 125°C; V = 0,8x VBO 20 µA VBO VBO(TVJ) = VBO, 25°C [1 + KT (TVJ - 25°C)] IRMS f = 50 HZ; Tamb = 50°C 1.4 A connection pins soldered to printed circuit (conductor 0,035x2mm) IAVM 0.9 A ISM tp = 0.1 ms; Tamb = 50°C non repetitive 200 A I²t tp = 0.1 ms; Tamb = 50°C 2 A2s Tamb -40...+125 °C Tstg -40...+125 °C TVJm 125 °C KT Temperatur coefficient of VBO 2·10-3 K-1 KP coefficient for energy per pulse EP (material constant) 700 K/Ws RthJA - natural convection 60 K/W - with air speed 2 m/s 45 K/W Weight 1 g Symbol Conditions Characteristic...

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© 2000 IXYS All rights reserved H - 3 IXBOD 1 -06...10 Fig. 3 On-state voltage Fig. 4 Transient thermal resistance. Va = 0 m/s Va = 2 m/s Fig. 2 Energy per pulse for exponentially decaying current pulse (see waveforms definition). Fig. 1 Energy per pulse for trapezoidal current wafeforms (see waveform definition). t [s] TVJ = 125°C TVJ = 25°C iT [A] [V] VT [K/W] ZthJA

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© 2000 IXYS All rights reserved H - 5 IXBOD 1 -12R...42R(D) Fig. 8 Transient thermal resistance. K A Dimensions in mm (1 mm = 0.0394") Fig. 5 Energy per pulse for single BOD element for trapezoidal wave current. EP must be multiplied by number of elements for total energy. Fig. 6 Energy per pulse for single BOD element for exponentially decaying current pulse. EP must be multiplied by number of elements for total energy. K A Va = 2 m/s n = number of BOD-Elements in series Va = 0 m/s [K/W] ZthJA t [s] Fig. 7 On-state voltage at TVJ = 125°C. [V] VT iT [A]

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H - 6 © 2000 IXYS All rights reserved Application Protection of thyristors against overvoltages in forward direction. VD i BOD Thyristor VBO (TVJ) = VBO, 25°C [1+KT(TVJ - 25°C)] a. The maximum junction temperature shall be calculated for a module IXBOD 1 -30R at an ambient temperature Ta = 60 °C, an exponentially decaying current ITM = 40A, a pulsewidth tp = 2 ìs, an operating frequency f = 50 Hz and natural convection. From the diagram Fig. 6 the energy per pulse is obtained: Ep1 = 6 x 10-3 Ws For a module IXBOD1-30R the number of single IXBOD elements is: n = 3 At natural air cooling the thermal...

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© 2000 IXYS All rights reserved H - 7 Notice 1. A IXBOD element has a maximum reverse blocking voltage of 10V. 2. For higher reverse voltages a fast, soft recovery diode must be connected in series (Fig. 9). This diode must fulfill the conditions of Fig. 10. T : Thyristor R1 : Current limiting resistance (0 - 200 Ù) D1 : Series-diode (fast recovery diode) D3 : Protection diode D4 : Zener diode, typical VZ : 3-6 V R2, C2 : Protection against parasitic triggering; recommended values: R2 : 100 - 1000 Ù C2 : 22 - 47 nF R3, C3 : Snubber network of the thyristor Example of a circuit A simple emergency...

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Breakover Diodes

Breakover Diodes

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