Introduction
This document discusses the comparison between P3-series HiPerFET^TM power MOSFETs and super junction (SJ) power MOSFETs. The focus is on their electrical and thermal characteristics, which are crucial for high-voltage conversion systems.

Specifications
The P3-series HiPerFET^TM MOSFETs are highlighted for their low thermal resistances, high power dissipation, and high avalanche energy capabilities. These features contribute to improved power efficiency and reliability. The document compares the IXFX80N60P3 MOSFET with three SJ-MOSFETs: IPW60R041C6, FCH76N60NF, and STW88N65M5.

Gate Charge Evaluation
The IXFX80N60P3 MOSFET demonstrates superior gate charge characteristics compared to SJ devices, which is beneficial for high-frequency switching applications like SMPS and UPS. The low total gate charge reduces the gate drive power requirement, allowing for simpler and more economical gate drive solutions.

Body Diode Reverse Recovery Evaluation
The document describes the setup for evaluating the body diode reverse recovery of MOSFETs. The IXFX80N60P3 shows faster recovery time and lower peak reverse current compared to SJ devices, leading to reduced reverse recovery losses.

Turn-off and Turn-on Switching
The P3-series MOSFETs exhibit better turn-off and turn-on characteristics than SJ devices, with lower energy losses and faster switching speeds. This is attributed to the superior intrinsic diode characteristics of the P3-series.

Case Study
A case study on 100 kHz switching with a 50% duty cycle shows that the IXFX80N60P3 has lower total power losses compared to SJ devices, making it more efficient for power conversion applications.

Conclusion
The P3-series HiPerFET^TM MOSFETs offer significant advantages over SJ MOSFETs in terms of performance, energy savings, and cost-effectiveness. They are suitable for applications such as motor drives, DC-DC converters, and solar inverters.

References
The document cites several references for further reading on power semiconductor devices and MOSFET basics.