COVER STORY Comparison between HiPerFETTM MOSFETs and Super Junction MOSFETs With the introduction of P3-series HiPerFETTM power MOSFETs, IXYS sets a milestone in HiPerFETTM technology, provides one of the best solutions in power MOSFETs for medium to high frequency designs. These devices have an optimum combination of low on-resistance (RDS(on)), low gate charge (QG), a fast intrinsic diode for low reverse-recovery (Qrr) and improved turn-off dV/dt immunity. The enhanced dV/dt ratings offer significant safety margins for the stresses encountered in high-voltage switching applications. By Abdus...

COVER STORY Q2 acts as a control device which is subjected to a double pulse. The current ramps in Q2 and freewheels through the D.U.T. body diode when Q2 turns off. When Q2 is turned on again by the second pulse, the D.U.T. body diode must recover before Q2 voltage can drop. During diode reverse recovery, its reverse current goes to Q2 along with the load current. The reverse recovery di/dt can cause large voltage overshoots (Ldi/dt) due to circuit and package lead’s stray inductance. Figure 3 demonstrates the test waveforms at 75oC operation. The larger the reverse current and the longer recovery...

COVER STORY better than most of SJ devices in terms of turn-off energy losses, fall and rise times. These results are reflected in the computation of di/dt as well [4]. joules. The conduction energy are computed using datasheet parameters (Vf and RDS(on)) at specific temperature, assumed device current ID=20A and duty cycle-50%. Turn on Characteristics The turn-on waveforms are shown in Figure 6 for 75 °C operation. The quantities measured are the turn-on energy losses (Eon), the rise time of the drain current (tri), the fall time of the drain voltage (tfv) and the current slope (di/dt), which...