Efciency Through Technology 650V XPT™ Trench IGBTs Highly Ecient Low On-State Voltage IGBTs for Hard or Soft Switching Applications March 2013 OVERVIEW IXYS Corporation (NASDAQ: IXYS) announces the release of a new IGBT product line – 650V XPT™ Trench IGBTs. The current ratings of devices in the new product family range from 30A to 200A at a high temperature of 110°C. With on-stage voltages as low as 1.7V, these new eXtreme-light Punch-Through (XPT™) devices are designed to minimize conduction and switching losses, especially in hard-switching applications. Optimized for dierent switching speed ranges (up to 60kHz), these IGBTs provide designers with exibility in device selection in terms of cost, saturation voltage, and switching frequency. Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. Developed using the IXYS XPT™ thin-wafer technology and state-of-the-art 4th generation (GenX4™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coecient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-o losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and signicantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. PLUS247 The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines. These 650V XPT™ IGBTs are available in the following international standard packages: TO-247, TO-264, SOT-227B, PLUS247, and ISOPLUS247™. Some example part numbers are IXXH30N65B4, IXXN110N65C4H1, IXXK160N65C4, and IXXX200N65B4, with collector current ratings of 65A, 234A, 290A, and 370A, respectively. SOT-227B FEATURES Low on-state voltages VCE(sat) Optimized for high-speed switching (up to 60kHz) Short circuit capability (10µs) Square RBSOA Positive thermal coecient of VCE(sat) Ultra-fast anti-parallel diodes (Sonic-FRD™) International standard packages ADVANTAGES Hard-switching capabilities High power densities Temperature stability of diode forward voltage VF Low gate drive requirements APPLICATIONS Battery chargers Lamp ballasts Motor drives Power inverters Power Factor Correction (PFC) circuits Switch-mode power supplies Uninterruptible power supplies (UPS) Welding machines

650V XPT™ Trench IGBTs Summary Table Part Number Package Style Single Copacked (Sonic-FRD™) Single Single Single Copacked (Sonic-FRD™) Single Copacked (Sonic-FRD™) Copacked (Sonic-FRD™) Copacked (Sonic-FRD™) Single Copacked (Sonic-FRD™) Copacked (Sonic-FRD™) Single Single Single Single Single Single Tradeo Diagram [turn-o loss vs. on-state voltage] Eo vs. VCE(sat) These 650V XPT™ Trench IGBTs are optimized to achieve low switching and conduction losses while maintaining low on-state voltages. The graph demonstrates a superior trade-o (turn-o energy loss vs. on-state voltage) of the new IGBTs...