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4500V POWER MOSFETs

4500V POWER MOSFETs

4500V POWER MOSFETs

Product catalog summary
Introduction
IXYS Corporation has introduced a new line of 4500V N-Channel Power MOSFETs, designed for high voltage power conversion applications. These MOSFETs are available in international standard size packages and offer current ratings from 200mA to 2A, making them suitable for fast-switching applications requiring high blocking voltages up to 4.5kV.
Specifications and Features
  • High blocking voltage capability up to 4500V.
  • Positive temperature coefficient of on-state resistance, ideal for parallel device operation.
  • Direct Copper Bond (DCB) substrate technology provides up to 4500V ceramic isolation, low thermal impedance, and improved power cycling capabilities.
  • Molding epoxies meet UL 94 V-0 flammability classification.
Applications
  • Capacitor discharge circuits
  • High voltage power supplies
  • Pulse circuits
  • Laser and X-ray generation systems
  • High voltage relay disconnect circuits
  • Energy tapping applications from the power grid
Advantages
  • High power density and space savings by eliminating the need for multiple series-connected devices.
  • Easy mounting and reduced EMI/RFI due to low coupling capacitance.
Package Types and Part Numbers
  • TO-263HV, TO-268HV, ISOPLUS i4-Pak™, ISOPLUS i5-Pak™
  • Part numbers include IXTT02N450HV, IXTA02N450HV, IXTF02N450, IXTF1N450, IXTT1N450HV, IXTL2N450 with varying current ratings.
Competitive Landscape
IXYS is a leader in very high voltage discrete Power MOSFETs, with few competitors above 1700V.
Application Circuits
  • Figure 2 describes a capacitor-charging power supply circuit using 4500V Power MOSFETs for pulsed power applications.
  • Figure 3 illustrates an AC switch circuit employing a 4500V Power MOSFET for precise current control and over-current protection.
See more

Catalog excerpts

4500V POWER MOSFETs-1

Efciency Through Technology 4500V POWER MOSFETs Ideal for very high voltage power conversion applications JULY 2013 OVERVIEW IXYS Corporation (NASDAQ: IXYS), a manufacturer of power semiconductors and integrated circuits for energy eciency, power management, and motor control applications, announces the release of the highest voltage Power MOSFET product line in the industry – 4500V N-Channel Power MOSFETs in international standard size packages. The current ratings range from 200mA to 2A. They are specically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the positive temperature coecient of their on-state resistance, these very high voltage MOSFETs are ideally suited for parallel device operation, which provides cost-eective solutions compared to series-connected, lower-voltage MOSFET ones. This also results in reduction in the associated gate drive circuitry, further simplifying the design, saving PCB board space, and improving the reliability of the overall system. Moreover, a ceramic isolation of up to 4.5kV is achieved with the Direct Copper Bond (DCB) substrate technology – an electrically isolated tab is provided for heat sinking. The DCB provides low thermal impedance and best-in-class power and temperature cycling capabilities. And the molding epoxies meet the UL 94 V-0 ammability classication. These new Power MOSFETs can provide an optimal solution for applications such as capacitor discharge circuits, high-voltage automated test equipment, laser and x-ray generation systems, high-voltage power supplies, and pulse circuits. The 4500V Power MOSFETs are available in IXYS’ proprietary high-voltage versions of the international standard packages: TO-263HV, TO-268HV, ISOPLUS i4-Pak™, ISOPLUS i5-Pak™. The part numbers include IXTT02N450HV, IXTA02N450HV, IXTF02N450, IXTF1N450, IXTT1N450HV, IXTL2N450, with collector current ratings of 200mA, 200mA, 200mA, 900mA, 1A, and 2A, respectively. ISOPLUS i4-Pak™ High blocking voltage Proprietary high voltage ISOPLUS™ packages Up to 4500V electrical isolation (DCB) UL 94 V-0 Flammability qualied (molding epoxies) High power density Space savings (eliminates multiple series-connected devices) Easy mounting Capacitor discharge circuits High voltage power supplies Pulse circuits Laser and X-ray generation systems High voltage relay disconnect circuits Energy tapping applications from the power grid

 Open the catalog to page 1
4500V POWER MOSFETs-2

4500V Power MOSFETs Summary Table VDSS Part Number Package Type Figure 1: Comparison of blocking voltages among major power semiconductor companies Figure 1 clearly shows the dominance of IXYS when it comes to very high voltage discrete Power MOSFETs. There are very few, if any, competitors above 1700V. or Competitive Landscape Direct Copper Bond (DCB) isolation • Provides up to 4500V ceramic isolation • Improves temperature and power cycling capabilities • Reduces EMI/RFI due to low coupling capacitance between die and heat sink • Lowers thermal resistance (RthJS) • Allows new circuit congurations...

 Open the catalog to page 2
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