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1000V Q3-Class HiPerFETTM Power MOSFET in SMPD Package Technology

1000V Q3-Class HiPerFETTM Power MOSFET in SMPD Package Technology
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1000V Q3-Class HiPerFETTM Power MOSFET in SMPD Package Technology - 1

Reduce The Size of Your High Power Design 1000V Q3-Class HiPerFETTM Power MOSFET in SMPD Package Technology Q3-Class HiPerFETTM Features: •Low Rdson & Qg •Low Intrinsic Gate Resistance •Fast Intrinsic Rectier •Excellent dV/dt Performance •High Avalanche Energy Capabilities •High Speed Switching Capabilities •High Noise immunity Applications: •DC-DC Converters •Battery Chargers •Switch-Mode and Resonant-Mode Power Supplies •DC Choppers •Temperature and Lighting Controls Part Number VDSS ID(cont) RDS(on) Max TC=25°C max TJ=25°C (V) (A) (Ω) EUROPE IXYS GmbH marcom@ixys.de USA IXYS Power sales@ixys.com SMPD Package Features: •Compact, Ultra-low Package Prole (5.3mm height x 24.8mm length x 32.3mm width) •2500V Ceramic Isolation (DCB) •Very High Power Cycling Capability •Excellent Thermal Performance •Low Package Weight (8g) •High Power Density Qg trr PD RthJC Package Typ Max (W) Max Style (nC) (ns) (ºC/W) 264 ASIA IXYS Taiwan/IXYS Korea sales@ixys.com.tw

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