1000V Q3-Class HiPerFET? Power MOSFET In SMPD Technology
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1000V Q3-Class HiPerFET™ Power MOSFET In SMPD Technology MORE POWER, LESS PACKAGE (ultra-low prole, energy ecient, and rugged) August 2012 OVERVIEW The 1000V/30A Q3-Class HiPerFETTM Power MOSFET is now available in the IXYS Surface Mount Power Device (SMPD) package. The device can be easily surfacemounted on a Printed Circuit Board (PCB), using a standard pick-and-place and reow soldering process. No costly screws, cables, bus-bars or hand soldered contacts are needed. Weighing only 8g, it is much lighter (typically by 50%) than comparable conventional power modules, enabling a lower carbon footprint for end users. This is one of the key “green” initiatives of IXYS Corporation as it develops new products lighter in weight for the Cleantech industry. Due to its new compact and high performance SMPD package, the MMIX1F44N100Q3 MOSFET exhibits a low package inductance and high current handling capability. A ceramic isolation of 2500V is achieved with the Direct Copper Bond (DCB) substrate technology–an electrically isolated tab is provided for heat sinking. The Q3-Class is a direct result of combining the latest PolarHVTM technology platform with advanced double metal construction, resulting in an optimal combination of low on-state resistance (RDS(on)) and gate charge (Qg). Additionally the device has a low gate-to-drain (Miller) charge (Qgd) and low intrinsic gate resistance (RGi). These enhancements lower gate drive requirements and switching losses. What’s more, the power switching capability and ruggedness of the device are further enhanced by the proven HiPerFETTM process, yielding a power MOSFET with a fast intrinsic rectier; the result is a low reverse recovery charge (Qrr), an ability to sustain hard-switching operations, and an excellent commutating dv/dt rating (up to 50V/ns). These featured diode properties translate into a faster transient response, an increase in power eciency, and higher operating frequencies. Other benecial product features include a low junction-to-case thermal resistance (RthJC(max)) of 0.18 °C/W and high avalanche energy (EAS) rating of 4 Joules. The new Power MOSFET is well suited for such applications as, among others, DC-DC converters, battery chargers, switch-mode and resonant power supplies, DC choppers, temperature and lighting controls, and high frequency plasma generators. In particular, the enhanced dv/dt rating and high avalanche energy capability mean additional safety margins for stresses encountered in high voltage industrial switching applications, improving the long-term reliability of these systems. FEATURES Low RDS(on) and gate charge (Qg) Low intrinsic gate resistance Fast intrinsic rectier Excellent dv/dt performance High power density High avalanche energy rating SMPD ADVANTAGES Ultra-low and compact package prole (5.3mm height x 24.8mm length x 32.3mm width) Surface mountable via standard reow process Low package weight (8g) 2500V ceramic isolation (DCB) Low package inductance Excellent thermal performance High power cycling capability APPLICATIONS DC-DC converters Battery chargers Switching and resonant power Supplies DC choppers Temperature and lighting controls

SMPD Q3-Class HiPerFET Power MOSFET Summary Table Part Number Package Style Ultra-low prole SMPD package ultra-low prole The above gure accentuates the compact and low-prole nature of the device. Compared to a conventional high power package such as the SOT-227, the IXYS SMPD features ¼ the weight and 1/3 the volume and provides similar electrical and thermal characteristics. Direct Copper Bond (DCB) isolation • Provides 2500V ceramic isolation • Improves temperature and power cycling capabilities • Reduces EMI/RFI due to low coupling capacitance between die and heat sink • Lowers thermal...