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Infineon Technologies AG
Silicon Switching Diode

Silicon Switching Diode

Product catalog summary

Overview: The document provides technical specifications for the BAL74 and BAR74 silicon switching diodes, designed for high-speed switching applications. These diodes are RoHS compliant and qualified according to AEC Q101 standards.

Specifications:

Package: SOT23, single configuration with markings JCs for BAL74 and JBs for BAR74.
Maximum Ratings at 25°C:
- Diode reverse voltage (VR): 50 V
- Forward current (IF): 250 mA
- Surge forward current (IFS): 4.5 A
- Total power dissipation (Ptot): 370 mW
- Junction temperature (Tj): 150°C
- Storage temperature (Tstg): -65 to 150°C
Thermal Resistance: Junction to soldering point (RthJS) ≤ 260 K/W

Electrical Characteristics:

Breakdown voltage (V(BR)): 50 V at I(BR) = 100 µA
Reverse current (IR): 0.1 µA at 25°C, 100 µA at 150°C
Forward voltage (VF): Max 1 V at IF = 100 mA
Diode capacitance (CT): Max 2 pF at VR = 0 V, f = 1 MHz
Reverse recovery time (trr): Max 4 ns

Graphs and Charts:

Reverse current vs. temperature graph shows IR increases with temperature.
Forward voltage vs. temperature graph indicates VF decreases with increasing temperature.
Forward current vs. forward voltage graph shows IF increases with VF.
Peak forward current vs. pulse duration graph illustrates IFM behavior over time.

Package Details:

Standard packing: 3,000 pieces per 180 mm reel, 10,000 pieces per 330 mm reel.
Package outline and footprint details provided.

Warnings and Information:

Components may contain dangerous substances; contact Infineon for details.
Components should only be used in life-support devices with express written approval from Infineon Technologies.

Catalog excerpts

Maximum Ratings at T > A = 25հC, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V > R 50 V Peak reverse voltage V > RM 50 Forward current I > F 250 mA Peak forward current I > FM - Surge forward current, t = 1 s I > FS 4.5 A Non-repetitive peak surge forward current I > FSM - Total power dissipation P > tot 370 mW T > S բɤ 54C Junction temperature T > j 150 аC Storage temperature T > stg -65 ... 150 > 1 Pb-containing package may be available upon special request 2 For calculation of R thJA please refer to Application Note Thermal Resistance

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AC Characteristics Diode capacitance C > T - - 2 pF V > R = 0 V, f = 1 MHz Reverse recovery time t > rr - - 4 ns I > F = 10 mA, I > R = 10 mA, measured at I > R = 1mA, R > L = 100 Ω Test circuit for reverse recovery time > D.U.T. Pulse generator: t > p = 100ns, D = 0.05, t > r = 0.6ns, R > i = 50 > Ω Ι F Oscillograph Oscillograph: R = 50 Ω , t > r = 0.35ns, C > EHN00015 ≤ 1pF > 2007-04-192 size="-1">

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Reverse current I > R = ( T > A ) Forward Voltage V > F = Ã ( T > A ) V > R = Parameter I > F = Parameter > 5 BAR 74EHB00012 BAR 74EHB00015 V Ι Ι F = 100 mA10 mA1 mA0.1 mA R V F 4 V R = 70 V70V25Vtyp. 510nA 10510 3 105 10 12 050150 100˚C max. 0 0.5 1.0 050100150 ˚C T A T A Forward current I > F = ( V > F ) Peak forward current I > FM = Ã ( t > p ) > EHB00013BAR 74 10A 2 BAR 74 EHB00014 Ι F F Ι FM D = 0.005 0.01 0.02 0.05 0.1 0.2 10 1 maxtyp 10 10 -1 t p t =T p -2-6 TD 00 0.51.0V1.550100mA150 10 10 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 V t 2007-04-193 >

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Edition 2006-02-01Published by Infineon Technologies AG 81726 Mnchen, Germany Infineon Technologies AG 2007. All Rights Reserved. Attention please! Information The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (쩓Beschaffenheitsgarantie). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement...

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