Introduction to Silicon Carbide (SiC) Devices
Silicon carbide (SiC) devices are part of the wide bandgap semiconductor group, offering superior characteristics for high voltage power semiconductors compared to silicon (Si). SiC devices have higher breakdown field strength and thermal conductivity, enabling higher efficiency levels.

Advantages of SiC over Silicon
SiC Schottky diodes can achieve higher breakdown voltages than silicon diodes, which are limited to 100-150 V. Infineon offers SiC products up to 1200 V in discrete packages and up to 1700 V in modules. Key features include no reverse recovery charge, purely capacitive switching, and high operating temperatures (up to 175°C). Benefits include improved system efficiency, reduced cooling requirements, higher frequency operation, and reduced EMI.

Performance and Efficiency
SiC diodes exhibit low turn-off losses and reduced switching losses, independent of load current, switching speed, and temperature. They provide significant efficiency improvements at the system level, especially at higher operating frequencies.

Applications
SiC devices are used in various applications such as servers, telecom, solar, UPS, EV charging, energy storage, PC power, motor drives, lighting, and CAV. Infineon is a leading supplier of SiC discrete power devices, with over 10 years of experience in SiC diode development.

Product Portfolio
Infineon's CoolSiC™ Schottky diodes are available in various generations and configurations, including 650 V G6, 650 V G5, 650 V G3, and 1200 V G5. The portfolio includes different package types such as TO-220, TO-247, DPAK, and ThinPAK.

Common Applications and Topologies
SiC diodes are used in power factor correction (PFC), solar microinverters, and various inverter topologies. They are integrated with CoolMOS™ and IGBT technologies for enhanced performance.

For more information, visit Infineon's website: www.infineon.com/sic