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Schottky Diodes

Schottky Diodes
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Product Summary Features V > DC 600 V Revolutionary semiconductor material - Silicon Carbide Օ Switching behavior benchmark No reverse recovery/ No forward recoveryՕ No temperature influence on the switching behavior High surge current capability Օ Pb-free lead plating; RoHS compliant Qualified according to JEDEC Q > c 15 nC I > F 6 A D > 2 PAK (PG-TO220-3-45) > 1) for target applicationsՕ Breakdown voltage tested at 5mA > 2) CCM PFC Օ Motor Drives thinQ! 2G Diode designed for fast switching applications like: Maximum ratings, at T Type Package Marking Pin 2 Pin 3 IDB06S60C D > 2 PAK (PG-TO220-3-45) D06S60C C A Rev. 2.1page 12009-01-07 > j =25 C, unless otherwise specified ParameterSymbolConditionsUnit Value Continuous forward current I > F T > C <135 аC6ARMS forward current I > F,RMS f =50 Hz9Surge non-repetitive forward current, sine halfwave I > F,SM T > C =25 C, t > p =10 ms46Repetitive peak forward current I T > j =150 аC, > F,RM T > C =100 C, D =0.124Non-repetitive peak forward current I > F,max T > C =25 аC, t > p =10 s210 i ղ t value i > 2 d tT > 2 C =25 C, t > p =10 ms10A sRepetitive peak reverse voltage V > RRM 600VDiode ruggedness dv/dtd v/ d t V > R =0Ѕ480V50V/nsPower dissipation P > tot T > C =25 C52WOperating and storage temperature T > j , T > stg -55 ... 175аC >

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ParameterSymbolConditionsUnitmin.typ.max.Thermal characteristics Values Thermal resistance, junction - case R > thJC --2.9K/W SMD version, device on PCB, minimal Footprint --62SMD version, device on PCB, 6 cm R > thJA 2 cooling area -35-Soldering temperature, reflowsoldering @ 10sec > 3) T > sold reflow MSL1--260C Electrical characteristics, at T > j =25 аC, unless otherwise specified Static characteristics DC blocking voltage V > DC I > R =0.08 mA600--VDiode forward voltage V > F I > F =6 A, T > j =25 C-1.51.7 I > F =6 A, T > j =150 аC-1.72.1Reverse current I > R V > R =600 V, T > j =25...

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1 Power dissipation2 Diode forward current P > tot =f( T > C ) I > F =f( T > C ); T > j 175 C > [W] [A] F tot I P 0102030405060 255075100125150175200 02 4 6 81012 1416 255075100125150175 T C [аC] T C [C] 3 Typ. forward characteristic4 Typ. forward characteristic in surge current I > F =f( V > F ); t > p =400 еs mode parameter: T > j I > F =f( V > F ); t > p =400 s; parameter T > j 100 հC 175 C 175 аC 25 C 150 аC -55 C 25 аC [A] [A] F F I I 100 C 150 аC -55 C 024681012141618 01234 010203040506070 02468 V F [V] V F [V] Rev. 2.1page 32009-01-07 >

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5 Typ. forward power dissipation vs. 6 Typ. reverse current vs. reverse voltageaverage forward current I > R =f( V > R ) P > F,AV =f( I > F ), T > C =100 C, parameter: D = t > p / T parameter: T > j 10 1 0.1 1 0.2 10 0.5 [W] [еA] 10 -1 R F(AV) I 175 C P 100 аC 10 -2 150 C 25 аC -55 C 051015202530 051015 10 -3 100200300400500600 I F(AV) [A] V R [V] 7 Transient thermal impedance8 Typ. capacitance vs. reverse voltage Z > thJC =f( t > p ) C =f( V > R ); T > C =25 аC, f =1 MHzparameter: D = t > p / T > 10 1 0.5 10 0.2 0.1 [K/W] [pF] thJC 0.05 C Z 0.02 10 -1 0.01 single pulse 10 -2 0100200300400...

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tr.row {} td.cell {} div.block {} div.paragraph {} .font0 { font:8.00pt "Arial", sans-serif; } Rev. 2.1 page 5 2009-01-07

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PG-TO220-3-45 (D2Pak): Outline Dimensions in mm/inches Rev. 2.1page 62009-01-07 >

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Published byInfineon Technologies AG81726 Munich, GermanyAll Rights Reserved.Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee ofconditions or characteristics. With respect to any examples or hints given herein, any typicalvalues stated herein and/or any information regarding the application of the device,Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rightsFor further information on technology, delivery terms...

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