Product Brief 1200V CoolSiC™ & Direct Drive Technology The green revolution is taking place Complete solution offer consisting of JFET, p-channel MOSFET and dedicated driver No reverse recovery charge thanks to unipolar MOSFET-like characteristics Ohmic output characteristics Monolithically integrated ultrafast Body Diode Technology, represents Infineon’s leading edge solution to bring actual designs towards new and so Utmost efficiency levels reachable far unattainable efficiency levels. The new CoolSiC™ consistently reduces the switching losses with No gate oxides in the structure respect to the available IGBT based silicon devices and even the conduction losses when its ohmic 10 years manufacturing of SiC diodes The revolutionary 1200V CoolSiC™ family, in combination with the proposed Direct Drive characteristics are fully exploited. Utmost efficiency at highest power density levels can be reached also thanks to Infineon CoolSiC™ monolithically integrated body diode, showing a switching Simplifies design-in and enables product to be operated as normally off device Extremely low and temperature independent switching losses Reduced conduction losses with respect to IGBT mainly at partial and at light load Low power losses in reverse operation in combination with synchronous rectification, reduced footprint Enables either reduced cooling requirements, the adoption of higher operating frequencies resulting in system costs savings by shrinking passive components or reaching a higher power density design in same footprint Utmost reliability performance comparable with that of an external SiC Schottky barrier diode. The Infineon CoolSiC™, High quality knowhow and capacity in SiC devices with its ultrafast body diode and dedicated Driver IC, represents the best solution for solar, UPS and industrial drives applications by combining best performance, reliability, safety and ease of use. Direct measurements in a Three-phase string Inverter (sunny tripower by SMA Solar Technology AG) Pout max 17kW fsw=16kHz 1) 99.0 98.5 Eciency [%] Measured system efficiencies at optimum operation point Output Power [% nominal] Measured system efficiencies at several DC link voltages (400V up to 800V) 1) G. Deboy, H. Ludwig, R. Mallwitz, R. Rupp, „New SiC JFET” with Integrated Body Diode Boosts Performance of Photovoltaic Systems” Proc. PCIM, May 2011 Industrial Drives

Product Brief 1200V CoolSiC™ & Direct Drive Technology The green revolution is taking place Infineon Direct Drive Technology The Infineon approach to SiC switches consists of a simple Drain cascode that directly drives both the CoolSiC™ and the LV p-channel and safe driver circuit design based on a dedicated driver IC MOSFET, as indicated in the picture on the left. The main features of the unique SiC direct drive approach are: A low-voltage Si MOSFET is used to insure safe off-state during start up or system failure. During normal operation, the LV MOSFET is turned-on and acts like a small resistance...